Molecular dynamics simulation of cluster ion bombardment of solid surfaces

Z. Insepov, I. Yamada

Research output: Contribution to journalArticle

93 Citations (Scopus)

Abstract

The Molecular Dynamics Method (MMD) is used for a simulation of interactions with gold and silicon surfaces of accelerated Arn(n ∼ 55-200) cluster ions with energies of 10 to 100 eV per cluster atom. The gold target sputtering yield Y can be described by a power dependence Y ∼ E2.35 on the Ar cluster total energy. The result of this calculation agrees with the experimental data point at an energy of 29 keV and a cluster size of 300 Ar atoms. The simulation shows that the sputtered flux for normally cluster incidence has a significant lateral momentum component. By oblique cluster incidence the sputtered flux is predominantly directed into a mirror angle. The sputtered surface material contains not only atoms but also small clusters. The preliminary results of the simulation of Ar cluster ions implantation after their impact on the Si(001) target shows that a significant amount of impinging Ar cluster atoms can be implanted into the target subsurface region.

Original languageEnglish
Pages (from-to)248-252
Number of pages5
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume99
Issue number1-4
DOIs
Publication statusPublished - May 5 1995
Externally publishedYes

Fingerprint

Ion bombardment
solid surfaces
Molecular dynamics
bombardment
molecular dynamics
Atoms
Computer simulation
ions
simulation
Gold
Fluxes
Ion implantation
Sputtering
Momentum
Mirrors
atoms
incidence
Silicon
gold
Ions

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

Cite this

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