Abstract
The molecular-dynamics simulation is used for simulation of sputtering of gold and silicon surfaces by accelerated Ar-n cluster ions with n ∼ 55-200 and energies of 10-100 eV per cluster atom. The sputtering yield Y can be described by a power dependency Y ∝ E2.35 on the total cluster energy. The result of the calculation agrees with the experimental data point at the energy of 29 keV and cluster size of 300 Ar atoms. The simulation shows that the sputtered flux has a significant lateral-momentum component and the sputtered surface materials contain not only atoms but also small clusters.
| Original language | English |
|---|---|
| Pages (from-to) | 1023-1027 |
| Number of pages | 5 |
| Journal | Surface Review and Letters |
| Volume | 3 |
| Issue number | 1 |
| Publication status | Published - Feb 1996 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Materials Chemistry
Cite this
Molecular-dynamics simulation of surface sputtering by energetic rare-gas cluster impact. / Insepov, Z.; Yamada, I.
In: Surface Review and Letters, Vol. 3, No. 1, 02.1996, p. 1023-1027.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Molecular-dynamics simulation of surface sputtering by energetic rare-gas cluster impact
AU - Insepov, Z.
AU - Yamada, I.
PY - 1996/2
Y1 - 1996/2
N2 - The molecular-dynamics simulation is used for simulation of sputtering of gold and silicon surfaces by accelerated Ar-n cluster ions with n ∼ 55-200 and energies of 10-100 eV per cluster atom. The sputtering yield Y can be described by a power dependency Y ∝ E2.35 on the total cluster energy. The result of the calculation agrees with the experimental data point at the energy of 29 keV and cluster size of 300 Ar atoms. The simulation shows that the sputtered flux has a significant lateral-momentum component and the sputtered surface materials contain not only atoms but also small clusters.
AB - The molecular-dynamics simulation is used for simulation of sputtering of gold and silicon surfaces by accelerated Ar-n cluster ions with n ∼ 55-200 and energies of 10-100 eV per cluster atom. The sputtering yield Y can be described by a power dependency Y ∝ E2.35 on the total cluster energy. The result of the calculation agrees with the experimental data point at the energy of 29 keV and cluster size of 300 Ar atoms. The simulation shows that the sputtered flux has a significant lateral-momentum component and the sputtered surface materials contain not only atoms but also small clusters.
UR - http://www.scopus.com/inward/record.url?scp=0000812127&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0000812127&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0000812127
VL - 3
SP - 1023
EP - 1027
JO - Surface Review and Letters
JF - Surface Review and Letters
SN - 0218-625X
IS - 1
ER -