Molecular-dynamics simulation of surface sputtering by energetic rare-gas cluster impact

Z. Insepov, I. Yamada

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

The molecular-dynamics simulation is used for simulation of sputtering of gold and silicon surfaces by accelerated Ar-n cluster ions with n ∼ 55-200 and energies of 10-100 eV per cluster atom. The sputtering yield Y can be described by a power dependency Y ∝ E2.35 on the total cluster energy. The result of the calculation agrees with the experimental data point at the energy of 29 keV and cluster size of 300 Ar atoms. The simulation shows that the sputtered flux has a significant lateral-momentum component and the sputtered surface materials contain not only atoms but also small clusters.

Original languageEnglish
Pages (from-to)1023-1027
Number of pages5
JournalSurface Review and Letters
Volume3
Issue number1
Publication statusPublished - Feb 1996
Externally publishedYes

Fingerprint

Noble Gases
Inert gases
Sputtering
Molecular dynamics
rare gases
sputtering
molecular dynamics
Atoms
Computer simulation
simulation
Silicon
Gold
Momentum
atoms
Ions
Fluxes
energy
gold
momentum
silicon

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

Cite this

Molecular-dynamics simulation of surface sputtering by energetic rare-gas cluster impact. / Insepov, Z.; Yamada, I.

In: Surface Review and Letters, Vol. 3, No. 1, 02.1996, p. 1023-1027.

Research output: Contribution to journalArticle

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