Molecular dynamics study of implant and damage formation in low-energy boron cluster ion implantation

Takaaki Aoki, Jiro Matsuo, Zinetulla Insepov, Isao Yamada

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Citations (Scopus)

Abstract

Cluster ion implantation using decaborane (B10H14) has been proposed as a useful technique for shallow junction formation. In order to examine the characteristics and advantages of cluster ion implantation, molecular dynamics simulations of small B cluster and monomer implantation were performed. B1, B4 and B10 are irradiated on Si (001) substrates with acceleration energy of 230 eV/atom so that B4 and B10 are accelerated with 0.92 keV and 2.3 keV, respectively. Those three show the same implant profile and implant efficiency, which agrees with the experimental result of B10H14 implantation. This result suggests that each B atom in a B cluster acts individually in similar way to a monomer ion. B clusters show the same properties in projection range and implant efficiency as the monomer whereas non-linearity is shown in damage formation. The number of displacements by one B atom once increases to the same maximum value for both a B cluster and a B monomer. However, the damage recovery process is different depending on the cluster size. Damage induced by B10 recovers more slowly and 4 times as many displacements remain compared to B1 8 ps after impact. These displacements by B10 clusters concentrate in the near surface region of the impact point, while the ones by B1 reside around the implanted B atom as the end-of-range damage. This characteristic damage formation by B10 cluster is expected to avoid transient-enhanced-diffusion of incident B atoms and achieve the formation of high-quality shallow p-type junction.

Original languageEnglish
Title of host publicationProceedings of the International Conference on Ion Implantation Technology
PublisherIEEE
Pages1254-1257
Number of pages4
ISBN (Print)078034538X
Publication statusPublished - Dec 1 1999
EventProceedings of the 1998 International Conference on 'Ion Implantation Technology' Proceedings (IIT'98) - Kyoto, Jpn
Duration: Jun 22 1998Jun 26 1998

Publication series

NameProceedings of the International Conference on Ion Implantation Technology
Volume2

Other

OtherProceedings of the 1998 International Conference on 'Ion Implantation Technology' Proceedings (IIT'98)
CityKyoto, Jpn
Period6/22/986/26/98

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Aoki, T., Matsuo, J., Insepov, Z., & Yamada, I. (1999). Molecular dynamics study of implant and damage formation in low-energy boron cluster ion implantation. In Proceedings of the International Conference on Ion Implantation Technology (pp. 1254-1257). (Proceedings of the International Conference on Ion Implantation Technology; Vol. 2). IEEE.