Monolithic integration of InAlAs/InGaAs enhancement and depletion (E/D)-mode metamorphic HEMTs on GaAs substrate

D. C. Dumka, W. E. Hoke, P. J. Lemonias, R. Schwindt, G. Cueva, I. Adesida

Research output: Contribution to conferencePaperpeer-review

1 Citation (Scopus)

Abstract

Monolithically integrated metamorphic high electron mobility transistor (HEMT) made on substrates of semiconducting gallium arsenide with gate lengths down to 0.13 micrometres was studied. The device layers were grown on the substrate using molecular beam epitaxy (MBE). Wet chemical etching was carried out and ohmic contacts were formed by furnace alloying in ambient nitrogen. Overlay metallization on the ohmic contacts and measurement pads of the devices was also deposited during gate formation. A shift in the threshold voltage towards positive voltage and enhancement in transconductance was observed due to gate anneal process by direct current and radio frequency measurements.

Original languageEnglish
Pages49-50
Number of pages2
Publication statusPublished - Jan 1 2001
EventDevice Research Conference (DRC) - Notre Dame, IN, United States
Duration: Jun 25 2001Jun 27 2001

Other

OtherDevice Research Conference (DRC)
CountryUnited States
CityNotre Dame, IN
Period6/25/016/27/01

ASJC Scopus subject areas

  • Engineering(all)

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