Abstract
A process for the monolithic integration of enhancement- and depletion-mode high electron mobility transistors (E/D-HEMTs) in the lattice-matched InAlAs/InGaAs/InP material system is reported for gate lengths ranging from 0.3 μm to 1.0 μm. The E-HEMTs with a 0.3 μm gate length exhibit a threshold voltage of +187 m V and a maximum DC extrinsic transconductance of 625 mS/mm, while a threshold voltage of -443 mV and a transconductance of 462 mS/mm are measured for D-HEMTs of the same gate length. Variations of threshold voltage for all devices under study was minimal, with the 0.3 μm gate length devices showing a standard deviation of 12 mV for the D-HEMTs and only 7 mV for the E-HEMTs. The devices demonstrate excellent RF performance, with the 0.3 μm E-HEMTs exhibiting a unity current gain cutoff frequency (ft) of 95 GHz, and the 0.3 μm D-HEMTs yielding a nearly identical ft of 102 GHz. To the best of the authors' knowledge, this is the first report of high speed monolithically integrated E/D HEMTs on lattice-matched InP-based materials.
| Original language | English |
|---|---|
| Pages (from-to) | 51-54 |
| Number of pages | 4 |
| Journal | Technical Digest - International Electron Devices Meeting |
| Publication status | Published - 1996 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
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Monolithic integration of InAlAs/InGaAs/InP enhancement- and depletion-mode high electron mobility transistors. / Mahajan, A.; Fay, P.; Arafa, M.; Cueva, G.; Adesida, I.
In: Technical Digest - International Electron Devices Meeting, 1996, p. 51-54.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Monolithic integration of InAlAs/InGaAs/InP enhancement- and depletion-mode high electron mobility transistors
AU - Mahajan, A.
AU - Fay, P.
AU - Arafa, M.
AU - Cueva, G.
AU - Adesida, I.
PY - 1996
Y1 - 1996
N2 - A process for the monolithic integration of enhancement- and depletion-mode high electron mobility transistors (E/D-HEMTs) in the lattice-matched InAlAs/InGaAs/InP material system is reported for gate lengths ranging from 0.3 μm to 1.0 μm. The E-HEMTs with a 0.3 μm gate length exhibit a threshold voltage of +187 m V and a maximum DC extrinsic transconductance of 625 mS/mm, while a threshold voltage of -443 mV and a transconductance of 462 mS/mm are measured for D-HEMTs of the same gate length. Variations of threshold voltage for all devices under study was minimal, with the 0.3 μm gate length devices showing a standard deviation of 12 mV for the D-HEMTs and only 7 mV for the E-HEMTs. The devices demonstrate excellent RF performance, with the 0.3 μm E-HEMTs exhibiting a unity current gain cutoff frequency (ft) of 95 GHz, and the 0.3 μm D-HEMTs yielding a nearly identical ft of 102 GHz. To the best of the authors' knowledge, this is the first report of high speed monolithically integrated E/D HEMTs on lattice-matched InP-based materials.
AB - A process for the monolithic integration of enhancement- and depletion-mode high electron mobility transistors (E/D-HEMTs) in the lattice-matched InAlAs/InGaAs/InP material system is reported for gate lengths ranging from 0.3 μm to 1.0 μm. The E-HEMTs with a 0.3 μm gate length exhibit a threshold voltage of +187 m V and a maximum DC extrinsic transconductance of 625 mS/mm, while a threshold voltage of -443 mV and a transconductance of 462 mS/mm are measured for D-HEMTs of the same gate length. Variations of threshold voltage for all devices under study was minimal, with the 0.3 μm gate length devices showing a standard deviation of 12 mV for the D-HEMTs and only 7 mV for the E-HEMTs. The devices demonstrate excellent RF performance, with the 0.3 μm E-HEMTs exhibiting a unity current gain cutoff frequency (ft) of 95 GHz, and the 0.3 μm D-HEMTs yielding a nearly identical ft of 102 GHz. To the best of the authors' knowledge, this is the first report of high speed monolithically integrated E/D HEMTs on lattice-matched InP-based materials.
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UR - http://www.scopus.com/inward/citedby.url?scp=0030399752&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0030399752
SP - 51
EP - 54
JO - Technical Digest - International Electron Devices Meeting
JF - Technical Digest - International Electron Devices Meeting
SN - 0163-1918
ER -