Monolithic integration of InAlAs/InGaAs/InP enhancement- and depletion-mode high electron mobility transistors

A. Mahajan, P. Fay, M. Arafa, G. Cueva, I. Adesida

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4 Citations (Scopus)

Abstract

A process for the monolithic integration of enhancement- and depletion-mode high electron mobility transistors (E/D-HEMTs) in the lattice-matched InAlAs/InGaAs/InP material system is reported for gate lengths ranging from 0.3 μm to 1.0 μm. The E-HEMTs with a 0.3 μm gate length exhibit a threshold voltage of +187 m V and a maximum DC extrinsic transconductance of 625 mS/mm, while a threshold voltage of -443 mV and a transconductance of 462 mS/mm are measured for D-HEMTs of the same gate length. Variations of threshold voltage for all devices under study was minimal, with the 0.3 μm gate length devices showing a standard deviation of 12 mV for the D-HEMTs and only 7 mV for the E-HEMTs. The devices demonstrate excellent RF performance, with the 0.3 μm E-HEMTs exhibiting a unity current gain cutoff frequency (ft) of 95 GHz, and the 0.3 μm D-HEMTs yielding a nearly identical ft of 102 GHz. To the best of the authors' knowledge, this is the first report of high speed monolithically integrated E/D HEMTs on lattice-matched InP-based materials.

Original languageEnglish
Pages (from-to)51-54
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - 1996
Externally publishedYes

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High electron mobility transistors
high electron mobility transistors
depletion
augmentation
Threshold voltage
threshold voltage
Transconductance
transconductance
Cutoff frequency
unity
standard deviation
cut-off
direct current
high speed

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

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title = "Monolithic integration of InAlAs/InGaAs/InP enhancement- and depletion-mode high electron mobility transistors",
abstract = "A process for the monolithic integration of enhancement- and depletion-mode high electron mobility transistors (E/D-HEMTs) in the lattice-matched InAlAs/InGaAs/InP material system is reported for gate lengths ranging from 0.3 μm to 1.0 μm. The E-HEMTs with a 0.3 μm gate length exhibit a threshold voltage of +187 m V and a maximum DC extrinsic transconductance of 625 mS/mm, while a threshold voltage of -443 mV and a transconductance of 462 mS/mm are measured for D-HEMTs of the same gate length. Variations of threshold voltage for all devices under study was minimal, with the 0.3 μm gate length devices showing a standard deviation of 12 mV for the D-HEMTs and only 7 mV for the E-HEMTs. The devices demonstrate excellent RF performance, with the 0.3 μm E-HEMTs exhibiting a unity current gain cutoff frequency (ft) of 95 GHz, and the 0.3 μm D-HEMTs yielding a nearly identical ft of 102 GHz. To the best of the authors' knowledge, this is the first report of high speed monolithically integrated E/D HEMTs on lattice-matched InP-based materials.",
author = "A. Mahajan and P. Fay and M. Arafa and G. Cueva and I. Adesida",
year = "1996",
language = "English",
pages = "51--54",
journal = "Technical Digest - International Electron Devices Meeting",
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T1 - Monolithic integration of InAlAs/InGaAs/InP enhancement- and depletion-mode high electron mobility transistors

AU - Mahajan, A.

AU - Fay, P.

AU - Arafa, M.

AU - Cueva, G.

AU - Adesida, I.

PY - 1996

Y1 - 1996

N2 - A process for the monolithic integration of enhancement- and depletion-mode high electron mobility transistors (E/D-HEMTs) in the lattice-matched InAlAs/InGaAs/InP material system is reported for gate lengths ranging from 0.3 μm to 1.0 μm. The E-HEMTs with a 0.3 μm gate length exhibit a threshold voltage of +187 m V and a maximum DC extrinsic transconductance of 625 mS/mm, while a threshold voltage of -443 mV and a transconductance of 462 mS/mm are measured for D-HEMTs of the same gate length. Variations of threshold voltage for all devices under study was minimal, with the 0.3 μm gate length devices showing a standard deviation of 12 mV for the D-HEMTs and only 7 mV for the E-HEMTs. The devices demonstrate excellent RF performance, with the 0.3 μm E-HEMTs exhibiting a unity current gain cutoff frequency (ft) of 95 GHz, and the 0.3 μm D-HEMTs yielding a nearly identical ft of 102 GHz. To the best of the authors' knowledge, this is the first report of high speed monolithically integrated E/D HEMTs on lattice-matched InP-based materials.

AB - A process for the monolithic integration of enhancement- and depletion-mode high electron mobility transistors (E/D-HEMTs) in the lattice-matched InAlAs/InGaAs/InP material system is reported for gate lengths ranging from 0.3 μm to 1.0 μm. The E-HEMTs with a 0.3 μm gate length exhibit a threshold voltage of +187 m V and a maximum DC extrinsic transconductance of 625 mS/mm, while a threshold voltage of -443 mV and a transconductance of 462 mS/mm are measured for D-HEMTs of the same gate length. Variations of threshold voltage for all devices under study was minimal, with the 0.3 μm gate length devices showing a standard deviation of 12 mV for the D-HEMTs and only 7 mV for the E-HEMTs. The devices demonstrate excellent RF performance, with the 0.3 μm E-HEMTs exhibiting a unity current gain cutoff frequency (ft) of 95 GHz, and the 0.3 μm D-HEMTs yielding a nearly identical ft of 102 GHz. To the best of the authors' knowledge, this is the first report of high speed monolithically integrated E/D HEMTs on lattice-matched InP-based materials.

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