Monolithic integration of thermally stable enhancement-mode and depletion-mode InAlAs/InGaAs/InP HEMTs utilizing Ir-gate and Ag-ohmic contact technologies

Weifeng Zhao; Niu Jin; Guang Chen; Liang Wang; Ilesanmi Adesida

doi:10.1109/IEDM.2006.346855

Monolithic integration of thermally stable enhancement-mode and depletion-mode InAlAs/InGaAs/InP HEMTs utilizing Ir-gate and Ag-ohmic contact technologies

Weifeng Zhao, Niu Jin, Guang Chen, Liang Wang, Ilesanmi Adesida

Nazarbayev University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

This paper reports a newly developed fabrication process for monolithic integration of thermally stable InAlAs/InGaAs/InP E/D-HEMTs based on Ir-gate and Agohmic contact technologies. The Ir-gate and Ag-ohmic contacts were annealed simultaneously after passivation using a SiN_x layer. Both integrated E/D-HEMTs with gate-length of 0.2 μm demonstrated excellent DC and RF characteristics.

Original language	English
Title of host publication	2006 International Electron Devices Meeting Technical Digest, IEDM
DOIs	https://doi.org/10.1109/IEDM.2006.346855
Publication status	Published - Dec 1 2006
Event	2006 International Electron Devices Meeting, IEDM - San Francisco, CA, United States Duration: Dec 10 2006 → Dec 13 2006

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Other

Other	2006 International Electron Devices Meeting, IEDM
Country	United States
City	San Francisco, CA
Period	12/10/06 → 12/13/06

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1109/IEDM.2006.346855

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Zhao, W., Jin, N., Chen, G., Wang, L., & Adesida, I. (2006). Monolithic integration of thermally stable enhancement-mode and depletion-mode InAlAs/InGaAs/InP HEMTs utilizing Ir-gate and Ag-ohmic contact technologies. In 2006 International Electron Devices Meeting Technical Digest, IEDM [4154274] (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2006.346855

Monolithic integration of thermally stable enhancement-mode and depletion-mode InAlAs/InGaAs/InP HEMTs utilizing Ir-gate and Ag-ohmic contact technologies. / Zhao, Weifeng; Jin, Niu; Chen, Guang; Wang, Liang; Adesida, Ilesanmi.

2006 International Electron Devices Meeting Technical Digest, IEDM. 2006. 4154274 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Zhao, W, Jin, N, Chen, G, Wang, L & Adesida, I 2006, Monolithic integration of thermally stable enhancement-mode and depletion-mode InAlAs/InGaAs/InP HEMTs utilizing Ir-gate and Ag-ohmic contact technologies. in 2006 International Electron Devices Meeting Technical Digest, IEDM., 4154274, Technical Digest - International Electron Devices Meeting, IEDM, 2006 International Electron Devices Meeting, IEDM, San Francisco, CA, United States, 12/10/06. https://doi.org/10.1109/IEDM.2006.346855

Zhao W, Jin N, Chen G, Wang L, Adesida I. Monolithic integration of thermally stable enhancement-mode and depletion-mode InAlAs/InGaAs/InP HEMTs utilizing Ir-gate and Ag-ohmic contact technologies. In 2006 International Electron Devices Meeting Technical Digest, IEDM. 2006. 4154274. (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2006.346855

Zhao, Weifeng ; Jin, Niu ; Chen, Guang ; Wang, Liang ; Adesida, Ilesanmi. / Monolithic integration of thermally stable enhancement-mode and depletion-mode InAlAs/InGaAs/InP HEMTs utilizing Ir-gate and Ag-ohmic contact technologies. 2006 International Electron Devices Meeting Technical Digest, IEDM. 2006. (Technical Digest - International Electron Devices Meeting, IEDM).

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abstract = "This paper reports a newly developed fabrication process for monolithic integration of thermally stable InAlAs/InGaAs/InP E/D-HEMTs based on Ir-gate and Agohmic contact technologies. The Ir-gate and Ag-ohmic contacts were annealed simultaneously after passivation using a SiNx layer. Both integrated E/D-HEMTs with gate-length of 0.2 μm demonstrated excellent DC and RF characteristics.",

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