Monolithic integration of thermally stable enhancement-mode and depletion-mode InAlAs/InGaAs/InP HEMTs utilizing Ir-gate and Ag-ohmic contact technologies

Weifeng Zhao, Niu Jin, Guang Chen, Liang Wang, Ilesanmi Adesida

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper reports a newly developed fabrication process for monolithic integration of thermally stable InAlAs/InGaAs/InP E/D-HEMTs based on Ir-gate and Agohmic contact technologies. The Ir-gate and Ag-ohmic contacts were annealed simultaneously after passivation using a SiNx layer. Both integrated E/D-HEMTs with gate-length of 0.2 μm demonstrated excellent DC and RF characteristics.

Original languageEnglish
Title of host publication2006 International Electron Devices Meeting Technical Digest, IEDM
DOIs
Publication statusPublished - 2006
Externally publishedYes
Event2006 International Electron Devices Meeting, IEDM - San Francisco, CA, United States
Duration: Dec 10 2006Dec 13 2006

Other

Other2006 International Electron Devices Meeting, IEDM
CountryUnited States
CitySan Francisco, CA
Period12/10/0612/13/06

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Ohmic contacts
High electron mobility transistors
Passivation
Fabrication

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Monolithic integration of thermally stable enhancement-mode and depletion-mode InAlAs/InGaAs/InP HEMTs utilizing Ir-gate and Ag-ohmic contact technologies. / Zhao, Weifeng; Jin, Niu; Chen, Guang; Wang, Liang; Adesida, Ilesanmi.

2006 International Electron Devices Meeting Technical Digest, IEDM. 2006. 4154274.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Zhao, W, Jin, N, Chen, G, Wang, L & Adesida, I 2006, Monolithic integration of thermally stable enhancement-mode and depletion-mode InAlAs/InGaAs/InP HEMTs utilizing Ir-gate and Ag-ohmic contact technologies. in 2006 International Electron Devices Meeting Technical Digest, IEDM., 4154274, 2006 International Electron Devices Meeting, IEDM, San Francisco, CA, United States, 12/10/06. https://doi.org/10.1109/IEDM.2006.346855
Zhao, Weifeng ; Jin, Niu ; Chen, Guang ; Wang, Liang ; Adesida, Ilesanmi. / Monolithic integration of thermally stable enhancement-mode and depletion-mode InAlAs/InGaAs/InP HEMTs utilizing Ir-gate and Ag-ohmic contact technologies. 2006 International Electron Devices Meeting Technical Digest, IEDM. 2006.
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