Abstract
This paper reports a newly developed fabrication process for monolithic integration of thermally stable InAlAs/InGaAs/InP E/D-HEMTs based on Ir-gate and Agohmic contact technologies. The Ir-gate and Ag-ohmic contacts were annealed simultaneously after passivation using a SiNx layer. Both integrated E/D-HEMTs with gate-length of 0.2 μm demonstrated excellent DC and RF characteristics.
| Original language | English |
|---|---|
| Title of host publication | 2006 International Electron Devices Meeting Technical Digest, IEDM |
| DOIs | |
| Publication status | Published - 2006 |
| Externally published | Yes |
| Event | 2006 International Electron Devices Meeting, IEDM - San Francisco, CA, United States Duration: Dec 10 2006 → Dec 13 2006 |
Other
| Other | 2006 International Electron Devices Meeting, IEDM |
|---|---|
| Country | United States |
| City | San Francisco, CA |
| Period | 12/10/06 → 12/13/06 |
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ASJC Scopus subject areas
- Engineering(all)
Cite this
Monolithic integration of thermally stable enhancement-mode and depletion-mode InAlAs/InGaAs/InP HEMTs utilizing Ir-gate and Ag-ohmic contact technologies. / Zhao, Weifeng; Jin, Niu; Chen, Guang; Wang, Liang; Adesida, Ilesanmi.
2006 International Electron Devices Meeting Technical Digest, IEDM. 2006. 4154274.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
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TY - GEN
T1 - Monolithic integration of thermally stable enhancement-mode and depletion-mode InAlAs/InGaAs/InP HEMTs utilizing Ir-gate and Ag-ohmic contact technologies
AU - Zhao, Weifeng
AU - Jin, Niu
AU - Chen, Guang
AU - Wang, Liang
AU - Adesida, Ilesanmi
PY - 2006
Y1 - 2006
N2 - This paper reports a newly developed fabrication process for monolithic integration of thermally stable InAlAs/InGaAs/InP E/D-HEMTs based on Ir-gate and Agohmic contact technologies. The Ir-gate and Ag-ohmic contacts were annealed simultaneously after passivation using a SiNx layer. Both integrated E/D-HEMTs with gate-length of 0.2 μm demonstrated excellent DC and RF characteristics.
AB - This paper reports a newly developed fabrication process for monolithic integration of thermally stable InAlAs/InGaAs/InP E/D-HEMTs based on Ir-gate and Agohmic contact technologies. The Ir-gate and Ag-ohmic contacts were annealed simultaneously after passivation using a SiNx layer. Both integrated E/D-HEMTs with gate-length of 0.2 μm demonstrated excellent DC and RF characteristics.
UR - http://www.scopus.com/inward/record.url?scp=46049093237&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=46049093237&partnerID=8YFLogxK
U2 - 10.1109/IEDM.2006.346855
DO - 10.1109/IEDM.2006.346855
M3 - Conference contribution
AN - SCOPUS:46049093237
SN - 1424404398
SN - 9781424404391
BT - 2006 International Electron Devices Meeting Technical Digest, IEDM
ER -