TY - GEN
T1 - Monolithic integration of thermally stable enhancement-mode and depletion-mode InAlAs/InGaAs/InP HEMTs utilizing Ir-gate and Ag-ohmic contact technologies
AU - Zhao, Weifeng
AU - Jin, Niu
AU - Chen, Guang
AU - Wang, Liang
AU - Adesida, Ilesanmi
PY - 2006/12/1
Y1 - 2006/12/1
N2 - This paper reports a newly developed fabrication process for monolithic integration of thermally stable InAlAs/InGaAs/InP E/D-HEMTs based on Ir-gate and Agohmic contact technologies. The Ir-gate and Ag-ohmic contacts were annealed simultaneously after passivation using a SiNx layer. Both integrated E/D-HEMTs with gate-length of 0.2 μm demonstrated excellent DC and RF characteristics.
AB - This paper reports a newly developed fabrication process for monolithic integration of thermally stable InAlAs/InGaAs/InP E/D-HEMTs based on Ir-gate and Agohmic contact technologies. The Ir-gate and Ag-ohmic contacts were annealed simultaneously after passivation using a SiNx layer. Both integrated E/D-HEMTs with gate-length of 0.2 μm demonstrated excellent DC and RF characteristics.
UR - http://www.scopus.com/inward/record.url?scp=46049093237&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=46049093237&partnerID=8YFLogxK
U2 - 10.1109/IEDM.2006.346855
DO - 10.1109/IEDM.2006.346855
M3 - Conference contribution
AN - SCOPUS:46049093237
SN - 1424404398
SN - 9781424404391
T3 - Technical Digest - International Electron Devices Meeting, IEDM
BT - 2006 International Electron Devices Meeting Technical Digest, IEDM
T2 - 2006 International Electron Devices Meeting, IEDM
Y2 - 10 December 2006 through 13 December 2006
ER -