Monolithnic integration of In0.53Ga0.47As photodiodes and In0.53Ga0.47As/In0.52Al0.48As HEMTs on GaAs substrates for long wavelength OEIC applications

J. H. Jang, G. Cueva, R. Sankaralingam, P. Fay, W. E. Hoke, I. Adesida

Research output: Contribution to conferencePaperpeer-review

3 Citations (Scopus)

Abstract

The long-wavelength photodiodes and high electron mobility transistors (HEMT) with In0.53Ga0.47As channel were monolithically integrated on GaAs substrate. The photodiodes exhibited high speed and low leakage characteristics. The performance of HEMTs beneath the photodiode layers was found to be comparable to those fabricated on HEMT-only heterostructures.

Original languageEnglish
Pages55-58
Number of pages4
Publication statusPublished - Jan 1 2002
EventProceedings of the 2002 24th Annual IEEE Gallium Arsenide Integrated Circuit Symposium (IEEE GaAs IC Symposium) - Monterey, CA, United States
Duration: Oct 20 2002Oct 23 2002

Other

OtherProceedings of the 2002 24th Annual IEEE Gallium Arsenide Integrated Circuit Symposium (IEEE GaAs IC Symposium)
CountryUnited States
CityMonterey, CA
Period10/20/0210/23/02

Keywords

  • HEMT
  • InGaAs
  • Metamorphic
  • OEICs
  • Photodiodes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Monolithnic integration of In<sub>0.53</sub>Ga<sub>0.47</sub>As photodiodes and In<sub>0.53</sub>Ga<sub>0.47</sub>As/In<sub>0.52</sub>Al<sub>0.48</sub>As HEMTs on GaAs substrates for long wavelength OEIC applications'. Together they form a unique fingerprint.

Cite this