Monolithnic integration of In0.53Ga0.47As photodiodes and In0.53Ga0.47As/In0.52Al0.48As HEMTs on GaAs substrates for long wavelength OEIC applications

J. H. Jang; G. Cueva; R. Sankaralingam; P. Fay; W. E. Hoke; I. Adesida

Monolithnic integration of In_0.53Ga_0.47As photodiodes and In_0.53Ga_0.47As/In_0.52Al_0.48As HEMTs on GaAs substrates for long wavelength OEIC applications

J. H. Jang, G. Cueva, R. Sankaralingam, P. Fay, W. E. Hoke, I. Adesida

Nazarbayev University

Research output: Contribution to conference › Paper › peer-review

3 Citations (Scopus)

Abstract

The long-wavelength photodiodes and high electron mobility transistors (HEMT) with In_0.53Ga_0.47As channel were monolithically integrated on GaAs substrate. The photodiodes exhibited high speed and low leakage characteristics. The performance of HEMTs beneath the photodiode layers was found to be comparable to those fabricated on HEMT-only heterostructures.

Original language	English
Pages	55-58
Number of pages	4
Publication status	Published - Jan 1 2002
Event	Proceedings of the 2002 24th Annual IEEE Gallium Arsenide Integrated Circuit Symposium (IEEE GaAs IC Symposium) - Monterey, CA, United States Duration: Oct 20 2002 → Oct 23 2002

Other

Other	Proceedings of the 2002 24th Annual IEEE Gallium Arsenide Integrated Circuit Symposium (IEEE GaAs IC Symposium)
Country	United States
City	Monterey, CA
Period	10/20/02 → 10/23/02

Keywords

HEMT
InGaAs
Metamorphic
OEICs
Photodiodes

ASJC Scopus subject areas

Electrical and Electronic Engineering

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Jang, J. H., Cueva, G., Sankaralingam, R., Fay, P., Hoke, W. E., & Adesida, I. (2002). Monolithnic integration of In_0.53Ga_0.47As photodiodes and In_0.53Ga_0.47As/In_0.52Al_0.48As HEMTs on GaAs substrates for long wavelength OEIC applications. 55-58. Paper presented at Proceedings of the 2002 24th Annual IEEE Gallium Arsenide Integrated Circuit Symposium (IEEE GaAs IC Symposium), Monterey, CA, United States.

Monolithnic integration of In_0.53Ga_0.47As photodiodes and In_0.53Ga_0.47As/In_0.52Al_0.48As HEMTs on GaAs substrates for long wavelength OEIC applications. / Jang, J. H.; Cueva, G.; Sankaralingam, R.; Fay, P.; Hoke, W. E.; Adesida, I.

2002. 55-58 Paper presented at Proceedings of the 2002 24th Annual IEEE Gallium Arsenide Integrated Circuit Symposium (IEEE GaAs IC Symposium), Monterey, CA, United States.

Research output: Contribution to conference › Paper › peer-review

Jang, JH, Cueva, G, Sankaralingam, R, Fay, P, Hoke, WE & Adesida, I 2002, 'Monolithnic integration of In_0.53Ga_0.47As photodiodes and In_0.53Ga_0.47As/In_0.52Al_0.48As HEMTs on GaAs substrates for long wavelength OEIC applications', Paper presented at Proceedings of the 2002 24th Annual IEEE Gallium Arsenide Integrated Circuit Symposium (IEEE GaAs IC Symposium), Monterey, CA, United States, 10/20/02 - 10/23/02 pp. 55-58.

Jang JH, Cueva G, Sankaralingam R, Fay P, Hoke WE, Adesida I. Monolithnic integration of In_0.53Ga_0.47As photodiodes and In_0.53Ga_0.47As/In_0.52Al_0.48As HEMTs on GaAs substrates for long wavelength OEIC applications. 2002. Paper presented at Proceedings of the 2002 24th Annual IEEE Gallium Arsenide Integrated Circuit Symposium (IEEE GaAs IC Symposium), Monterey, CA, United States.

Jang, J. H. ; Cueva, G. ; Sankaralingam, R. ; Fay, P. ; Hoke, W. E. ; Adesida, I. / Monolithnic integration of In_0.53Ga_0.47As photodiodes and In_0.53Ga_0.47As/In_0.52Al_0.48As HEMTs on GaAs substrates for long wavelength OEIC applications. Paper presented at Proceedings of the 2002 24th Annual IEEE Gallium Arsenide Integrated Circuit Symposium (IEEE GaAs IC Symposium), Monterey, CA, United States.4 p.

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abstract = "The long-wavelength photodiodes and high electron mobility transistors (HEMT) with In0.53Ga0.47As channel were monolithically integrated on GaAs substrate. The photodiodes exhibited high speed and low leakage characteristics. The performance of HEMTs beneath the photodiode layers was found to be comparable to those fabricated on HEMT-only heterostructures.",

keywords = "HEMT, InGaAs, Metamorphic, OEICs, Photodiodes",

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AU - Cueva, G.

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AU - Hoke, W. E.

AU - Adesida, I.

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