Abstract
The long-wavelength photodiodes and high electron mobility transistors (HEMT) with In0.53Ga0.47As channel were monolithically integrated on GaAs substrate. The photodiodes exhibited high speed and low leakage characteristics. The performance of HEMTs beneath the photodiode layers was found to be comparable to those fabricated on HEMT-only heterostructures.
Original language | English |
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Pages | 55-58 |
Number of pages | 4 |
Publication status | Published - Jan 1 2002 |
Event | Proceedings of the 2002 24th Annual IEEE Gallium Arsenide Integrated Circuit Symposium (IEEE GaAs IC Symposium) - Monterey, CA, United States Duration: Oct 20 2002 → Oct 23 2002 |
Other
Other | Proceedings of the 2002 24th Annual IEEE Gallium Arsenide Integrated Circuit Symposium (IEEE GaAs IC Symposium) |
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Country | United States |
City | Monterey, CA |
Period | 10/20/02 → 10/23/02 |
Keywords
- HEMT
- InGaAs
- Metamorphic
- OEICs
- Photodiodes
ASJC Scopus subject areas
- Electrical and Electronic Engineering