Morphology and luminescence of porous GaN generated via Pt-assisted electroless etching

Diego J. Díaz, Todd L. Williamson, Ilesanmi Adesida, Paul W. Bohn, Richard J. Molnar

Research output: Contribution to journalArticle

53 Citations (Scopus)

Abstract

An efficient, Pt-assisted, electroless etching technique was developed for the generation of porous semiconductors, in general, and porous GaN, in particular. A number of similarities in PGaN production in different types of starting materials were noted. The morphology of PGaN produced in different samples was characterized by SEM and AFM.

Original languageEnglish
Pages (from-to)2375-2383
Number of pages9
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume20
Issue number6
DOIs
Publication statusPublished - Nov 1 2002

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Morphology and luminescence of porous GaN generated via Pt-assisted electroless etching'. Together they form a unique fingerprint.

  • Cite this