Morphology and luminescence of porous GaN generated via Pt-assisted electroless etching

Diego J. Díaz, Todd L. Williamson, Ilesanmi Adesida, Paul W. Bohn, Richard J. Molnar

Research output: Contribution to journalArticle

52 Citations (Scopus)

Abstract

An efficient, Pt-assisted, electroless etching technique was developed for the generation of porous semiconductors, in general, and porous GaN, in particular. A number of similarities in PGaN production in different types of starting materials were noted. The morphology of PGaN produced in different samples was characterized by SEM and AFM.

Original languageEnglish
Pages (from-to)2375-2383
Number of pages9
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume20
Issue number6
DOIs
Publication statusPublished - Nov 2002
Externally publishedYes

Fingerprint

Luminescence
Etching
etching
atomic force microscopy
luminescence
Semiconductor materials
Scanning electron microscopy
scanning electron microscopy

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Surfaces and Interfaces
  • Physics and Astronomy (miscellaneous)

Cite this

Morphology and luminescence of porous GaN generated via Pt-assisted electroless etching. / Díaz, Diego J.; Williamson, Todd L.; Adesida, Ilesanmi; Bohn, Paul W.; Molnar, Richard J.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 20, No. 6, 11.2002, p. 2375-2383.

Research output: Contribution to journalArticle

@article{8d230b62c4064ec1bc43d00dc56bd413,
title = "Morphology and luminescence of porous GaN generated via Pt-assisted electroless etching",
abstract = "An efficient, Pt-assisted, electroless etching technique was developed for the generation of porous semiconductors, in general, and porous GaN, in particular. A number of similarities in PGaN production in different types of starting materials were noted. The morphology of PGaN produced in different samples was characterized by SEM and AFM.",
author = "D{\'i}az, {Diego J.} and Williamson, {Todd L.} and Ilesanmi Adesida and Bohn, {Paul W.} and Molnar, {Richard J.}",
year = "2002",
month = "11",
doi = "10.1116/1.1521428",
language = "English",
volume = "20",
pages = "2375--2383",
journal = "Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena",
issn = "1071-1023",
publisher = "AVS Science and Technology Society",
number = "6",

}

TY - JOUR

T1 - Morphology and luminescence of porous GaN generated via Pt-assisted electroless etching

AU - Díaz, Diego J.

AU - Williamson, Todd L.

AU - Adesida, Ilesanmi

AU - Bohn, Paul W.

AU - Molnar, Richard J.

PY - 2002/11

Y1 - 2002/11

N2 - An efficient, Pt-assisted, electroless etching technique was developed for the generation of porous semiconductors, in general, and porous GaN, in particular. A number of similarities in PGaN production in different types of starting materials were noted. The morphology of PGaN produced in different samples was characterized by SEM and AFM.

AB - An efficient, Pt-assisted, electroless etching technique was developed for the generation of porous semiconductors, in general, and porous GaN, in particular. A number of similarities in PGaN production in different types of starting materials were noted. The morphology of PGaN produced in different samples was characterized by SEM and AFM.

UR - http://www.scopus.com/inward/record.url?scp=0036883102&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036883102&partnerID=8YFLogxK

U2 - 10.1116/1.1521428

DO - 10.1116/1.1521428

M3 - Article

VL - 20

SP - 2375

EP - 2383

JO - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

JF - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena

SN - 1071-1023

IS - 6

ER -