Abstract
An efficient, Pt-assisted, electroless etching technique was developed for the generation of porous semiconductors, in general, and porous GaN, in particular. A number of similarities in PGaN production in different types of starting materials were noted. The morphology of PGaN produced in different samples was characterized by SEM and AFM.
Original language | English |
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Pages (from-to) | 2375-2383 |
Number of pages | 9 |
Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
Volume | 20 |
Issue number | 6 |
DOIs | |
Publication status | Published - Nov 1 2002 |
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering