Abstract
An efficient, Pt-assisted, electroless etching technique was developed for the generation of porous semiconductors, in general, and porous GaN, in particular. A number of similarities in PGaN production in different types of starting materials were noted. The morphology of PGaN produced in different samples was characterized by SEM and AFM.
| Original language | English |
|---|---|
| Pages (from-to) | 2375-2383 |
| Number of pages | 9 |
| Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
| Volume | 20 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - Nov 1 2002 |
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering
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Díaz, D. J., Williamson, T. L., Adesida, I., Bohn, P. W., & Molnar, R. J. (2002). Morphology and luminescence of porous GaN generated via Pt-assisted electroless etching. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 20(6), 2375-2383. https://doi.org/10.1116/1.1521428