Morphology and luminescence of porous GaN generated via Pt-assisted electroless etching

Diego J. Díaz; Todd L. Williamson; Ilesanmi Adesida; Paul W. Bohn; Richard J. Molnar

doi:10.1116/1.1521428

Morphology and luminescence of porous GaN generated via Pt-assisted electroless etching

Diego J. Díaz, Todd L. Williamson, Ilesanmi Adesida, Paul W. Bohn, Richard J. Molnar

Nazarbayev University

Research output: Contribution to journal › Article › peer-review

53 Citations (Scopus)

Abstract

An efficient, Pt-assisted, electroless etching technique was developed for the generation of porous semiconductors, in general, and porous GaN, in particular. A number of similarities in PGaN production in different types of starting materials were noted. The morphology of PGaN produced in different samples was characterized by SEM and AFM.

Original language	English
Pages (from-to)	2375-2383
Number of pages	9
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	20
Issue number	6
DOIs	https://doi.org/10.1116/1.1521428
Publication status	Published - Nov 1 2002

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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Morphology and luminescence of porous GaN generated via Pt-assisted electroless etching. / Díaz, Diego J.; Williamson, Todd L.; Adesida, Ilesanmi; Bohn, Paul W.; Molnar, Richard J.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 20, No. 6, 01.11.2002, p. 2375-2383.

Research output: Contribution to journal › Article › peer-review

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