An efficient, Pt-assisted, electroless etching technique was developed for the generation of porous semiconductors, in general, and porous GaN, in particular. A number of similarities in PGaN production in different types of starting materials were noted. The morphology of PGaN produced in different samples was characterized by SEM and AFM.
|Number of pages||9|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|Publication status||Published - Nov 1 2002|
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering