Abstract
An efficient, Pt-assisted, electroless etching technique was developed for the generation of porous semiconductors, in general, and porous GaN, in particular. A number of similarities in PGaN production in different types of starting materials were noted. The morphology of PGaN produced in different samples was characterized by SEM and AFM.
| Original language | English |
|---|---|
| Pages (from-to) | 2375-2383 |
| Number of pages | 9 |
| Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
| Volume | 20 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - Nov 2002 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Surfaces and Interfaces
- Physics and Astronomy (miscellaneous)
Cite this
Morphology and luminescence of porous GaN generated via Pt-assisted electroless etching. / Díaz, Diego J.; Williamson, Todd L.; Adesida, Ilesanmi; Bohn, Paul W.; Molnar, Richard J.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 20, No. 6, 11.2002, p. 2375-2383.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Morphology and luminescence of porous GaN generated via Pt-assisted electroless etching
AU - Díaz, Diego J.
AU - Williamson, Todd L.
AU - Adesida, Ilesanmi
AU - Bohn, Paul W.
AU - Molnar, Richard J.
PY - 2002/11
Y1 - 2002/11
N2 - An efficient, Pt-assisted, electroless etching technique was developed for the generation of porous semiconductors, in general, and porous GaN, in particular. A number of similarities in PGaN production in different types of starting materials were noted. The morphology of PGaN produced in different samples was characterized by SEM and AFM.
AB - An efficient, Pt-assisted, electroless etching technique was developed for the generation of porous semiconductors, in general, and porous GaN, in particular. A number of similarities in PGaN production in different types of starting materials were noted. The morphology of PGaN produced in different samples was characterized by SEM and AFM.
UR - http://www.scopus.com/inward/record.url?scp=0036883102&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0036883102&partnerID=8YFLogxK
U2 - 10.1116/1.1521428
DO - 10.1116/1.1521428
M3 - Article
VL - 20
SP - 2375
EP - 2383
JO - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
JF - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
SN - 1071-1023
IS - 6
ER -