Morphology evolution and luminescence properties of porous GaN generated via Pt-assisted electroless etching of hydride vapor phase epitaxy GaN on sapphire

Diego J. Díaz, Todd L. Williamson, Ilesanmi Adesida, Paul W. Bohn, Richard J. Molnar

Research output: Contribution to journalArticlepeer-review

54 Citations (Scopus)

Abstract

Morphology and luminescence properties of porous Gallium Nitride (GaN) were investigated. Pt-assisted electroless etching of hydride vapor phase epitaxy GaN on sapphire was carried out to produce porous gallium nitride. Cathodoluminescence (CL) spectroscopy shows band gap emission at 368 nm before and after etching with only small shifts in the wavelength of maximum emission. Results show that the intensity of CL emission decreases with etch time as the GaN is consumed.

Original languageEnglish
Pages (from-to)7526-7534
Number of pages9
JournalJournal of Applied Physics
Volume94
Issue number12
DOIs
Publication statusPublished - Dec 15 2003

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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