Morphology and luminescence properties of porous Gallium Nitride (GaN) were investigated. Pt-assisted electroless etching of hydride vapor phase epitaxy GaN on sapphire was carried out to produce porous gallium nitride. Cathodoluminescence (CL) spectroscopy shows band gap emission at 368 nm before and after etching with only small shifts in the wavelength of maximum emission. Results show that the intensity of CL emission decreases with etch time as the GaN is consumed.
ASJC Scopus subject areas
- Physics and Astronomy(all)