Mutual entrainment in delay-coupled nonidentical semiconductor lasers

A. Hohl, Athanasios Gavrielides, Thomas Erneux, Vassilios Kovanis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The dynamics of two mutually coupled but non-identical semiconductor lasers are studied experimentally, numerically and analytically for weak coupling. The lasers have dissimilar relaxation oscillation frequencies and intensities, and their mutual coupling strength is asymmetric. We find that the lasers may entrain to the relaxation oscillation frequency of either one of the lasers. The form of entrainment is a special form of synchronization, called localized synchronization, where one laser exhibits strong oscillations and the other one weak oscillations. We perform a bifurcation analysis to explain the mechanism of entrainment by taking advantage of the inherently large parameters in a semiconductor laser, the linewidth enhancement factor α and the ratio of the carrier and photon lifetime T.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
PublisherSociety of Photo-Optical Instrumentation Engineers
Pages647-663
Number of pages17
Volume2994
ISBN (Print)0819424056
Publication statusPublished - 1997
Externally publishedYes
EventPhysics and Simulation of Optoelectronic Devices V - San Jose, CA, USA
Duration: Feb 10 1997Feb 14 1997

Other

OtherPhysics and Simulation of Optoelectronic Devices V
CitySan Jose, CA, USA
Period2/10/972/14/97

Fingerprint

entrainment
Semiconductor lasers
semiconductor lasers
oscillations
Lasers
lasers
synchronism
Synchronization
carrier lifetime
Linewidth
Photons
life (durability)
augmentation
photons

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Hohl, A., Gavrielides, A., Erneux, T., & Kovanis, V. (1997). Mutual entrainment in delay-coupled nonidentical semiconductor lasers. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 2994, pp. 647-663). Society of Photo-Optical Instrumentation Engineers.

Mutual entrainment in delay-coupled nonidentical semiconductor lasers. / Hohl, A.; Gavrielides, Athanasios; Erneux, Thomas; Kovanis, Vassilios.

Proceedings of SPIE - The International Society for Optical Engineering. Vol. 2994 Society of Photo-Optical Instrumentation Engineers, 1997. p. 647-663.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hohl, A, Gavrielides, A, Erneux, T & Kovanis, V 1997, Mutual entrainment in delay-coupled nonidentical semiconductor lasers. in Proceedings of SPIE - The International Society for Optical Engineering. vol. 2994, Society of Photo-Optical Instrumentation Engineers, pp. 647-663, Physics and Simulation of Optoelectronic Devices V, San Jose, CA, USA, 2/10/97.
Hohl A, Gavrielides A, Erneux T, Kovanis V. Mutual entrainment in delay-coupled nonidentical semiconductor lasers. In Proceedings of SPIE - The International Society for Optical Engineering. Vol. 2994. Society of Photo-Optical Instrumentation Engineers. 1997. p. 647-663
Hohl, A. ; Gavrielides, Athanasios ; Erneux, Thomas ; Kovanis, Vassilios. / Mutual entrainment in delay-coupled nonidentical semiconductor lasers. Proceedings of SPIE - The International Society for Optical Engineering. Vol. 2994 Society of Photo-Optical Instrumentation Engineers, 1997. pp. 647-663
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