N-TiO2/p-Si anisotype semiconductor heterojunction structure

A. I. Mostovoi, V. V. Brus, P. D. Maryanchuk

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The dominating current-transport mechanisms were established: multistep tunnel-recombination via surface states at the metallurgical interface TiO 2/Si under low forward bias; the dominating mechanism of charge carriers' transport is tunneling at forward bias V > 0.6 V. The reverse current through the heterojunctions under investigation was analyzed in the scope of the tunnel mechanism.

Original languageEnglish
Title of host publicationCriMiCo 2013 - 2013 23rd International Crimean Conference Microwave and Telecommunication Technology, Conference Proceedings
Pages784-785
Number of pages2
Publication statusPublished - 2013
Externally publishedYes
Event2013 23rd International Crimean Conference Microwave and Telecommunication Technology, CriMiCo 2013 - Sevastopol, Crimea, Ukraine
Duration: Sep 8 2013Sep 14 2013

Publication series

NameCriMiCo 2013 - 2013 23rd International Crimean Conference Microwave and Telecommunication Technology, Conference Proceedings

Conference

Conference2013 23rd International Crimean Conference Microwave and Telecommunication Technology, CriMiCo 2013
CountryUkraine
CitySevastopol, Crimea
Period9/8/139/14/13

ASJC Scopus subject areas

  • Computer Networks and Communications

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