@inproceedings{b921bb0496364dd1b5cd4648dfecb008,
title = "N-TiO2/p-Si anisotype semiconductor heterojunction structure",
abstract = "The dominating current-transport mechanisms were established: multistep tunnel-recombination via surface states at the metallurgical interface TiO 2/Si under low forward bias; the dominating mechanism of charge carriers' transport is tunneling at forward bias V > 0.6 V. The reverse current through the heterojunctions under investigation was analyzed in the scope of the tunnel mechanism.",
author = "Mostovoi, {A. I.} and Brus, {V. V.} and Maryanchuk, {P. D.}",
year = "2013",
language = "English",
isbn = "9789663354019",
series = "CriMiCo 2013 - 2013 23rd International Crimean Conference Microwave and Telecommunication Technology, Conference Proceedings",
pages = "784--785",
booktitle = "CriMiCo 2013 - 2013 23rd International Crimean Conference Microwave and Telecommunication Technology, Conference Proceedings",
note = "2013 23rd International Crimean Conference Microwave and Telecommunication Technology, CriMiCo 2013 ; Conference date: 08-09-2013 Through 14-09-2013",
}