Nanocrater formation via Coulomb explosion initiated by impingement of highly charged xenon ions with silicon surface

A. A. Valuev; M. Terasawa; T. Sekioka; Z. A. Insepov; I. Yamada

Nanocrater formation via Coulomb explosion initiated by impingement of highly charged xenon ions with silicon surface

A. A. Valuev, M. Terasawa, T. Sekioka, Z. A. Insepov, I. Yamada

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The aim of this work is to study the dynamics of nanocrater formation induced by Coulomb explosion. The Molecular Dynamics (MD) method is used with realistic interaction potentials. The time and space distribution of density, pressure and temperature of the simulated Si sample and, finally, the time-velocity dependence of the charges and neutrals yield are investigated.

Original language	English
Title of host publication	2002 International Conference on Computational Nanoscience and Nanotechnology - ICCN 2002
Editors	M. Laudon, B. Romanowicz
Pages	455-457
Number of pages	3
Publication status	Published - 2002
Externally published	Yes
Event	2002 International Conference on Computational Nanoscience and Nanotechnology - ICCN 2002 - San Juan, Puerto Rico Duration: Apr 21 2002 → Apr 25 2002

Publication series

Name	2002 International Conference on Computational Nanoscience and Nanotechnology - ICCN 2002

Other

Other	2002 International Conference on Computational Nanoscience and Nanotechnology - ICCN 2002
Country	Puerto Rico
City	San Juan
Period	4/21/02 → 4/25/02

ASJC Scopus subject areas

Engineering(all)

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Cite this

Valuev, A. A., Terasawa, M., Sekioka, T., Insepov, Z. A., & Yamada, I. (2002). Nanocrater formation via Coulomb explosion initiated by impingement of highly charged xenon ions with silicon surface. In M. Laudon, & B. Romanowicz (Eds.), 2002 International Conference on Computational Nanoscience and Nanotechnology - ICCN 2002 (pp. 455-457). (2002 International Conference on Computational Nanoscience and Nanotechnology - ICCN 2002).

Nanocrater formation via Coulomb explosion initiated by impingement of highly charged xenon ions with silicon surface. / Valuev, A. A.; Terasawa, M.; Sekioka, T.; Insepov, Z. A.; Yamada, I.

2002 International Conference on Computational Nanoscience and Nanotechnology - ICCN 2002. ed. / M. Laudon; B. Romanowicz. 2002. p. 455-457 (2002 International Conference on Computational Nanoscience and Nanotechnology - ICCN 2002).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Valuev, AA, Terasawa, M, Sekioka, T, Insepov, ZA & Yamada, I 2002, Nanocrater formation via Coulomb explosion initiated by impingement of highly charged xenon ions with silicon surface. in M Laudon & B Romanowicz (eds), 2002 International Conference on Computational Nanoscience and Nanotechnology - ICCN 2002. 2002 International Conference on Computational Nanoscience and Nanotechnology - ICCN 2002, pp. 455-457, 2002 International Conference on Computational Nanoscience and Nanotechnology - ICCN 2002, San Juan, Puerto Rico, 4/21/02.

Valuev AA, Terasawa M, Sekioka T, Insepov ZA, Yamada I. Nanocrater formation via Coulomb explosion initiated by impingement of highly charged xenon ions with silicon surface. In Laudon M, Romanowicz B, editors, 2002 International Conference on Computational Nanoscience and Nanotechnology - ICCN 2002. 2002. p. 455-457. (2002 International Conference on Computational Nanoscience and Nanotechnology - ICCN 2002).

Valuev, A. A. ; Terasawa, M. ; Sekioka, T. ; Insepov, Z. A. ; Yamada, I. / Nanocrater formation via Coulomb explosion initiated by impingement of highly charged xenon ions with silicon surface. 2002 International Conference on Computational Nanoscience and Nanotechnology - ICCN 2002. editor / M. Laudon ; B. Romanowicz. 2002. pp. 455-457 (2002 International Conference on Computational Nanoscience and Nanotechnology - ICCN 2002).

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abstract = "The aim of this work is to study the dynamics of nanocrater formation induced by Coulomb explosion. The Molecular Dynamics (MD) method is used with realistic interaction potentials. The time and space distribution of density, pressure and temperature of the simulated Si sample and, finally, the time-velocity dependence of the charges and neutrals yield are investigated.",

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AU - Yamada, I.

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