Nanometer-period gratings in hydrogen silsesquioxane fabricated by electron beam lithography

Michael J. Word, Ilesanmi Adesida, Paul R. Berger

Research output: Contribution to journalArticle

70 Citations (Scopus)

Abstract

The surface properties of hydrogen silsesquioxane (HSQ) thin films were investigated using electron beam lithography. Experiments on resolution limits were conducted on single layers of HSQ by exposure of gratings with various periodicities ranging from 25 to 50 nm. HSQ films as thin as 25 nm showed very low rms roughness and were defect free. The achievement of isolated 6-nm-wide lines and 27 nm period gratings in 30 nm HSQ films on silicon substrates was demonstrated using 50 kV electron beam lithography.

Original languageEnglish
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume21
Issue number6
Publication statusPublished - Nov 2003
Externally publishedYes

Fingerprint

Electron beam lithography
lithography
gratings
electron beams
Hydrogen
hydrogen
surface properties
Surface properties
periodic variations
roughness
Surface roughness
Thin films
Silicon
Defects
defects
silicon
Substrates
thin films
Experiments

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Surfaces and Interfaces
  • Physics and Astronomy (miscellaneous)

Cite this

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abstract = "The surface properties of hydrogen silsesquioxane (HSQ) thin films were investigated using electron beam lithography. Experiments on resolution limits were conducted on single layers of HSQ by exposure of gratings with various periodicities ranging from 25 to 50 nm. HSQ films as thin as 25 nm showed very low rms roughness and were defect free. The achievement of isolated 6-nm-wide lines and 27 nm period gratings in 30 nm HSQ films on silicon substrates was demonstrated using 50 kV electron beam lithography.",
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AB - The surface properties of hydrogen silsesquioxane (HSQ) thin films were investigated using electron beam lithography. Experiments on resolution limits were conducted on single layers of HSQ by exposure of gratings with various periodicities ranging from 25 to 50 nm. HSQ films as thin as 25 nm showed very low rms roughness and were defect free. The achievement of isolated 6-nm-wide lines and 27 nm period gratings in 30 nm HSQ films on silicon substrates was demonstrated using 50 kV electron beam lithography.

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