Nanometer-scale gaps in hydrogen silsesquioxane resist for T -gate fabrication

Niu Jin, Sookyung Choi, Liang Wang, Guang Chen, Donghyun Kim, Vipan Kumar, Ilesanmi Adesida

Research output: Contribution to journalArticle

Abstract

The authors present a novel T -gate fabrication process which takes advantage of the unique high-resolution property of the low- k dielectric material, hydrogen silsesquioxane (HSQ), as a negative tone electron beam resist. By optimizing layout design and process parameters, the authors demonstrate ∼30 nm gap between two HSQ rectangular geometries, which is then used to define the T -gate footprint and support the T gate. An InGaAsInAlAsInP high electron mobility transistor with 80 nm gate length was fabricated using this HSQ-based resist technique. Excellent dc and rf performances are presented.

Original languageEnglish
Pages (from-to)2081-2084
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume25
Issue number6
DOIs
Publication statusPublished - 2007
Externally publishedYes

Fingerprint

Fabrication
Hydrogen
fabrication
hydrogen
High electron mobility transistors
Electron beams
footprints
high electron mobility transistors
layouts
Geometry
electron beams
high resolution
geometry
Low-k dielectric

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Surfaces and Interfaces
  • Physics and Astronomy (miscellaneous)

Cite this

Nanometer-scale gaps in hydrogen silsesquioxane resist for T -gate fabrication. / Jin, Niu; Choi, Sookyung; Wang, Liang; Chen, Guang; Kim, Donghyun; Kumar, Vipan; Adesida, Ilesanmi.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 25, No. 6, 2007, p. 2081-2084.

Research output: Contribution to journalArticle

Jin, Niu ; Choi, Sookyung ; Wang, Liang ; Chen, Guang ; Kim, Donghyun ; Kumar, Vipan ; Adesida, Ilesanmi. / Nanometer-scale gaps in hydrogen silsesquioxane resist for T -gate fabrication. In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2007 ; Vol. 25, No. 6. pp. 2081-2084.
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