Nanometer-scale gaps in hydrogen silsesquioxane resist for T -gate fabrication

Niu Jin, Sookyung Choi, Liang Wang, Guang Chen, Donghyun Kim, Vipan Kumar, Ilesanmi Adesida

Research output: Contribution to journalArticlepeer-review

Abstract

The authors present a novel T -gate fabrication process which takes advantage of the unique high-resolution property of the low- k dielectric material, hydrogen silsesquioxane (HSQ), as a negative tone electron beam resist. By optimizing layout design and process parameters, the authors demonstrate ∼30 nm gap between two HSQ rectangular geometries, which is then used to define the T -gate footprint and support the T gate. An InGaAsInAlAsInP high electron mobility transistor with 80 nm gate length was fabricated using this HSQ-based resist technique. Excellent dc and rf performances are presented.

Original languageEnglish
Pages (from-to)2081-2084
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume25
Issue number6
DOIs
Publication statusPublished - 2007

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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