Nanometer structure fabrication using electron beam lithography

M. Isaacson, A. Muray, M. Scheinfein, I. Adesida, E. Kratschmer

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

We review the program at Cornell University aimed at investigation of the size limits of patterning material using high energy electron beams. Structures at the 1-10 nanometer size scale have been fabricated using subnanometer diameter 100 keV electron beams. Using electron beam defined masks, we demonstrate ion beam replication of structures less than 30nm in width. Finally, in situ fabrication of metal structures with walls vertical to 0.8nm is shown using electron beam modification of AlF3.

Original languageEnglish
Pages (from-to)58-64
Number of pages7
JournalMicroelectronic Engineering
Volume2
Issue number1-3
DOIs
Publication statusPublished - 1984
Externally publishedYes

Fingerprint

Electron beam lithography
Electron beams
lithography
electron beams
Fabrication
fabrication
high energy electrons
Ion beams
Masks
masks
Metals
ion beams
metals

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Atomic and Molecular Physics, and Optics

Cite this

Nanometer structure fabrication using electron beam lithography. / Isaacson, M.; Muray, A.; Scheinfein, M.; Adesida, I.; Kratschmer, E.

In: Microelectronic Engineering, Vol. 2, No. 1-3, 1984, p. 58-64.

Research output: Contribution to journalArticle

Isaacson, M. ; Muray, A. ; Scheinfein, M. ; Adesida, I. ; Kratschmer, E. / Nanometer structure fabrication using electron beam lithography. In: Microelectronic Engineering. 1984 ; Vol. 2, No. 1-3. pp. 58-64.
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