Nitrogen doped-ZnO/n-GaN heterojunctions

Xin Yi Chen, Fang Fang, Alan M.C. Ng, Aleksandra B. Djurišič, Kok Wai Cheah, Chi Chung Ling, Wai Kin Chan, Patrick W.K. Fong, Hsian Fei Lui, Charles Surya

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

Nitrogen-doped ZnO nanorods were prepared by electrodeposition using two different Zn precursors (zinc nitrate and zinc acetate), while all other growth conditions (dopant precursor, concentration, growth temperature, and bias) were identical. We have shown that the precursor used affects the properties of the ZnO nanorods, and that the presence of rectifying properties in n-GaN/N:ZnO heterojunctions is strongly related to the use of nitrate precursor for ZnO growth. The difference in the properties of ZnO obtained from two precursors is attributed to the differences in native defect and impurity concentrations, which could affect the electronic properties of the samples.

Original languageEnglish
Article number084330
JournalJournal of Applied Physics
Volume109
Issue number8
DOIs
Publication statusPublished - Apr 15 2011
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Nitrogen doped-ZnO/n-GaN heterojunctions'. Together they form a unique fingerprint.

Cite this