Noninterfacial-nitride formation ohmic contact mechanism in Si-containing Ti/Al/Mo/Au metallizations on AlGaN/GaN heterostructures

Fitih M. Mohammed, Liang Wang, Ilesanmi Adesida

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17 Citations (Scopus)

Abstract

Excellent ohmic contact formation to undoped- AlGaNGaN heterostructures is achieved by the incorporation of silicon into TiAlMoAu metallization. Contact resistance and specific contact resistivity as low as 0.16 × mm and 6.77× 10-7 × cm2, respectively, have been obtained for the TiSiAlSiMoAu scheme. Transmission electron microscopy has revealed that the ohmic contact formation mechanism depends on the competing interfacial nitride and silicide formation reactions, the latter giving rise to improved contact performance. The formation and penetration of non-nitride reaction products of Si-containing Al-Au intermetallics to depths beyond the AlGaNGaN interface were observed. The superior ohmic performance of these schemes suggests that silicide-based low Schottky barrier contact formation may be preferable to an interfacial nitride contact mechanism in achieving improved ohmic behavior.

Original languageEnglish
Article number262111
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume87
Issue number26
DOIs
Publication statusPublished - Dec 1 2005

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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