Abstract
The monolithic integration of enhancement- and depletion-mode high-electron mobility transistors (E- and D- HEMTs) suitable for high-speed and low power circuit applications in the lattice-matched InP material system is examined. E-HEMT devices with gate-lengths of 0.25, 0.5 and 1.0 μm fabricated using a buried-Pt gate process demonstrate threshold voltages (VT) ranging from + 200 to + 258 mV and maximum extrinsic transconductances (gmext) as high as 800 mS mm-1, while D-HEMT devices of identical gate-lengths exhibited a VT ranging from -599 to -405 mV, and a gmext as high as 578 mS mm-1. The devices showed excellent rf characteristics, exhibiting unity current-gain cutoff frequencies (ft) as high as 106 GHz. Based on these results, 11, 23, and 59 stage ring oscillators using direct-coupled FET logic (DCFL) technology were fabricated and characterized. Room temperature propagation delays of 9.27 ps/stage with a power-delay product of 2.37 fJ/stage were achieved.
Original language | English |
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Pages (from-to) | 1333-1338 |
Number of pages | 6 |
Journal | Solid-State Electronics |
Volume | 43 |
Issue number | 8 |
DOIs | |
Publication status | Published - Aug 1999 |
Externally published | Yes |
Event | Proceedings of the 1998 3rd Tropical Workshop on Heterostructure Microelectronics for Information Systems Applications (TWHM-ISA '98) - Hayama-Machi, Jpn Duration: Aug 30 1998 → Sept 2 1998 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Materials Chemistry
- Electrical and Electronic Engineering