Numerical simulation of current-voltage characteristics of AlGaN/GaN HEMTs at high temperatures

Yuancheng Chang, K. Y. Tong, C. Surya

Research output: Contribution to journalArticle

38 Citations (Scopus)

Abstract

The de drain current characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) at high temperatures have been studied by numerical simulation from the self-consistent solution of Schrödinger's and Poisson's equations. The effects of temperature on the polarization and conduction band offset in the heterojunction have been considered. Our simulation results of the drain current at high temperature agree very well with reported experimental data. There is a significant reduction of saturation drain current when the temperature increases, and it is concluded that this is caused by both the decrease of saturation carrier velocity and two-dimensional electron density in the HEMT.

Original languageEnglish
Pages (from-to)188-192
Number of pages5
JournalSemiconductor Science and Technology
Volume20
Issue number2
DOIs
Publication statusPublished - Feb 1 2005
Externally publishedYes

Fingerprint

High electron mobility transistors
Current voltage characteristics
high electron mobility transistors
Drain current
Computer simulation
electric potential
saturation
simulation
Poisson equation
Temperature
heterojunctions
conduction bands
Conduction bands
Carrier concentration
Heterojunctions
temperature
polarization
Polarization
aluminum gallium nitride

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

Cite this

Numerical simulation of current-voltage characteristics of AlGaN/GaN HEMTs at high temperatures. / Chang, Yuancheng; Tong, K. Y.; Surya, C.

In: Semiconductor Science and Technology, Vol. 20, No. 2, 01.02.2005, p. 188-192.

Research output: Contribution to journalArticle

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AB - The de drain current characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) at high temperatures have been studied by numerical simulation from the self-consistent solution of Schrödinger's and Poisson's equations. The effects of temperature on the polarization and conduction band offset in the heterojunction have been considered. Our simulation results of the drain current at high temperature agree very well with reported experimental data. There is a significant reduction of saturation drain current when the temperature increases, and it is concluded that this is caused by both the decrease of saturation carrier velocity and two-dimensional electron density in the HEMT.

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