Numerical simulation of current-voltage characteristics of AlGaN/GaN HEMTs at high temperatures

Yuancheng Chang, K. Y. Tong, C. Surya

Research output: Contribution to journalArticle

42 Citations (Scopus)

Abstract

The de drain current characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) at high temperatures have been studied by numerical simulation from the self-consistent solution of Schrödinger's and Poisson's equations. The effects of temperature on the polarization and conduction band offset in the heterojunction have been considered. Our simulation results of the drain current at high temperature agree very well with reported experimental data. There is a significant reduction of saturation drain current when the temperature increases, and it is concluded that this is caused by both the decrease of saturation carrier velocity and two-dimensional electron density in the HEMT.

Original languageEnglish
Pages (from-to)188-192
Number of pages5
JournalSemiconductor Science and Technology
Volume20
Issue number2
DOIs
Publication statusPublished - Feb 1 2005
Externally publishedYes

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

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