Observation of random-telegraph noise in resonant-tunneling diodes

Sze Him Ng, Charles Surya, Elliott R. Brown, Paul A. Maki

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)


We report the observation of random-telegraph noise in GaAs/Al 0.4Ga0.6As resonant tunneling diodes. Measurements made on our devices from 57 to 70 K revealed discrete switching events with step heights ranging from 6 to 20 μV. Our studies indicated that the 20-μV switching sequences correspond to two-state thermally activated processes involving a single trap. At a bias of -0.4 V, the capture and emission activation energies of this trap are 81 and 51 meV, respectively, implying that the trap is located in the barrier. Our results suggest that the noise arises from transmission coefficient fluctuations due to hopping conduction of carriers through the barrier.

Original languageEnglish
Pages (from-to)2262-2264
Number of pages3
JournalApplied Physics Letters
Issue number18
Publication statusPublished - Dec 1 1993
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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