Abstract
A comparative study of TaAlMoAu and TiAlMoAu metallizations for AlGaNGaN high electron mobility transistors is presented. By the optimization of surface treatment schemes and annealing temperature, contact resistances of 0.172 and 0.228 Ω mm, and specific contact resistivities of 2.96× 10-7 and 1.09× 10-6 Ω cm2 were obtained for TiAlMoAu and TaAlMoAu, respectively. Auger electron spectroscopy (AES), x-ray diffraction (XRD), and transmission electron microscopy (TEM) were utilized to study microstructural changes occurring in the metallization layers as a result of heat treatment. Results indicate dynamic systems of severe intermixing between atoms from the metallization layers and epilayers resulting in changes in surface morphology, as determined by atomic force microscopy (AFM). The formation of intermetallics and interfacial compounds was observed. The combined effect of surface treatment and annealing-induced reaction is proposed as the mechanisms for low-resistance Ohmic contact formation.
| Original language | English |
|---|---|
| Pages (from-to) | 2330-2335 |
| Number of pages | 6 |
| Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
| Volume | 23 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - Nov 2005 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Surfaces and Interfaces
- Physics and Astronomy (miscellaneous)
Cite this
Ohmic contact formation mechanism of Ta/Al/Mo/Au and Ti/Al/Mo/Au metallizations on Al/GaN/GaN HEMTs. / Mohammed, Fitih M.; Wang, Liang; Selvanathan, Deepak; Hu, Hubert; Adesida, Ilesanmi.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 23, No. 6, 11.2005, p. 2330-2335.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Ohmic contact formation mechanism of Ta/Al/Mo/Au and Ti/Al/Mo/Au metallizations on Al/GaN/GaN HEMTs
AU - Mohammed, Fitih M.
AU - Wang, Liang
AU - Selvanathan, Deepak
AU - Hu, Hubert
AU - Adesida, Ilesanmi
PY - 2005/11
Y1 - 2005/11
N2 - A comparative study of TaAlMoAu and TiAlMoAu metallizations for AlGaNGaN high electron mobility transistors is presented. By the optimization of surface treatment schemes and annealing temperature, contact resistances of 0.172 and 0.228 Ω mm, and specific contact resistivities of 2.96× 10-7 and 1.09× 10-6 Ω cm2 were obtained for TiAlMoAu and TaAlMoAu, respectively. Auger electron spectroscopy (AES), x-ray diffraction (XRD), and transmission electron microscopy (TEM) were utilized to study microstructural changes occurring in the metallization layers as a result of heat treatment. Results indicate dynamic systems of severe intermixing between atoms from the metallization layers and epilayers resulting in changes in surface morphology, as determined by atomic force microscopy (AFM). The formation of intermetallics and interfacial compounds was observed. The combined effect of surface treatment and annealing-induced reaction is proposed as the mechanisms for low-resistance Ohmic contact formation.
AB - A comparative study of TaAlMoAu and TiAlMoAu metallizations for AlGaNGaN high electron mobility transistors is presented. By the optimization of surface treatment schemes and annealing temperature, contact resistances of 0.172 and 0.228 Ω mm, and specific contact resistivities of 2.96× 10-7 and 1.09× 10-6 Ω cm2 were obtained for TiAlMoAu and TaAlMoAu, respectively. Auger electron spectroscopy (AES), x-ray diffraction (XRD), and transmission electron microscopy (TEM) were utilized to study microstructural changes occurring in the metallization layers as a result of heat treatment. Results indicate dynamic systems of severe intermixing between atoms from the metallization layers and epilayers resulting in changes in surface morphology, as determined by atomic force microscopy (AFM). The formation of intermetallics and interfacial compounds was observed. The combined effect of surface treatment and annealing-induced reaction is proposed as the mechanisms for low-resistance Ohmic contact formation.
UR - http://www.scopus.com/inward/record.url?scp=29044440928&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=29044440928&partnerID=8YFLogxK
U2 - 10.1116/1.2101691
DO - 10.1116/1.2101691
M3 - Article
VL - 23
SP - 2330
EP - 2335
JO - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
JF - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
SN - 1071-1023
IS - 6
ER -