Ohmic contacts on n-type Al0.59Ga0.41N for solar blind detectors

D. Selvanathan, L. Zhou, V. Kumar, J. P. Long, M. A L Johnson, J. F. Schetzina, I. Adesida

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

Low-resistance ohmic contacts on Al0.59Ga0.41N were formed using a Ti/Al/Mo/Au metallisation scheme. A specific contact resistivity as low as 6 × 10-5Ωcm2 was achieved using a pre-metallisation treatment of the surface in an SiCl4 plasma with a self-bias voltage of -300 V in a reactive ion etching system.

Original languageEnglish
Pages (from-to)755-756
Number of pages2
JournalElectronics Letters
Volume38
Issue number14
DOIs
Publication statusPublished - Jul 4 2002
Externally publishedYes

Fingerprint

Ohmic contacts
Metallizing
Detectors
Reactive ion etching
Bias voltage
Plasmas

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Selvanathan, D., Zhou, L., Kumar, V., Long, J. P., Johnson, M. A. L., Schetzina, J. F., & Adesida, I. (2002). Ohmic contacts on n-type Al0.59Ga0.41N for solar blind detectors. Electronics Letters, 38(14), 755-756. https://doi.org/10.1049/el:20020500

Ohmic contacts on n-type Al0.59Ga0.41N for solar blind detectors. / Selvanathan, D.; Zhou, L.; Kumar, V.; Long, J. P.; Johnson, M. A L; Schetzina, J. F.; Adesida, I.

In: Electronics Letters, Vol. 38, No. 14, 04.07.2002, p. 755-756.

Research output: Contribution to journalArticle

Selvanathan, D, Zhou, L, Kumar, V, Long, JP, Johnson, MAL, Schetzina, JF & Adesida, I 2002, 'Ohmic contacts on n-type Al0.59Ga0.41N for solar blind detectors', Electronics Letters, vol. 38, no. 14, pp. 755-756. https://doi.org/10.1049/el:20020500
Selvanathan D, Zhou L, Kumar V, Long JP, Johnson MAL, Schetzina JF et al. Ohmic contacts on n-type Al0.59Ga0.41N for solar blind detectors. Electronics Letters. 2002 Jul 4;38(14):755-756. https://doi.org/10.1049/el:20020500
Selvanathan, D. ; Zhou, L. ; Kumar, V. ; Long, J. P. ; Johnson, M. A L ; Schetzina, J. F. ; Adesida, I. / Ohmic contacts on n-type Al0.59Ga0.41N for solar blind detectors. In: Electronics Letters. 2002 ; Vol. 38, No. 14. pp. 755-756.
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