Ohmic contacts to n-type GaN using Pd/Al metallization

A. T. Ping, M. Asif Khan, I. Adesida

Research output: Contribution to journalArticle

46 Citations (Scopus)

Abstract

Ohmic contacts to n-type GaN grown by metalorganic chemical vapor deposition were formed using a Pd/Al-based metallization. Ohmic contact resistances and specific contact resistances were investigated as a function of rapid thermal annealing temperature, Pd interlayer thickness, and annealing time. As-deposited Pd/Al was found to produce rectifying contacts while the metallization exhibited ohmic characteristics after annealing at temperatures as low as 400°C. A minimum contact resistance of 0.9 ohm-mm (specific contact resistance = 1.2 × 10-5 ohm-cm2) was obtained upon annealing at 650°C for 30 s. For comparison, Al and Ti/Al contacts were also investigated. Auger electron spectroscopy, secondary ion mass spectrometry, and x-ray diffraction were used to investigate metallurgical reactions.

Original languageEnglish
Pages (from-to)819-824
Number of pages6
JournalJournal of Electronic Materials
Volume25
Issue number5
Publication statusPublished - May 1996
Externally publishedYes

Fingerprint

Ohmic contacts
Contact resistance
Metallizing
contact resistance
electric contacts
annealing
Annealing
Rapid thermal annealing
Metallorganic chemical vapor deposition
Auger electron spectroscopy
Secondary ion mass spectrometry
secondary ion mass spectrometry
Auger spectroscopy
metalorganic chemical vapor deposition
electron spectroscopy
interlayers
x ray diffraction
Diffraction
X rays
Temperature

Keywords

  • Gallium nitride (GaN)
  • Ohmic contacts

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Materials Science(all)
  • Electronic, Optical and Magnetic Materials
  • Physics and Astronomy (miscellaneous)

Cite this

Ohmic contacts to n-type GaN using Pd/Al metallization. / Ping, A. T.; Khan, M. Asif; Adesida, I.

In: Journal of Electronic Materials, Vol. 25, No. 5, 05.1996, p. 819-824.

Research output: Contribution to journalArticle

Ping, A. T. ; Khan, M. Asif ; Adesida, I. / Ohmic contacts to n-type GaN using Pd/Al metallization. In: Journal of Electronic Materials. 1996 ; Vol. 25, No. 5. pp. 819-824.
@article{60d68efccda84b92b9eb8b8d250ecab4,
title = "Ohmic contacts to n-type GaN using Pd/Al metallization",
abstract = "Ohmic contacts to n-type GaN grown by metalorganic chemical vapor deposition were formed using a Pd/Al-based metallization. Ohmic contact resistances and specific contact resistances were investigated as a function of rapid thermal annealing temperature, Pd interlayer thickness, and annealing time. As-deposited Pd/Al was found to produce rectifying contacts while the metallization exhibited ohmic characteristics after annealing at temperatures as low as 400°C. A minimum contact resistance of 0.9 ohm-mm (specific contact resistance = 1.2 × 10-5 ohm-cm2) was obtained upon annealing at 650°C for 30 s. For comparison, Al and Ti/Al contacts were also investigated. Auger electron spectroscopy, secondary ion mass spectrometry, and x-ray diffraction were used to investigate metallurgical reactions.",
keywords = "Gallium nitride (GaN), Ohmic contacts",
author = "Ping, {A. T.} and Khan, {M. Asif} and I. Adesida",
year = "1996",
month = "5",
language = "English",
volume = "25",
pages = "819--824",
journal = "Journal of Electronic Materials",
issn = "0361-5235",
publisher = "Springer New York",
number = "5",

}

TY - JOUR

T1 - Ohmic contacts to n-type GaN using Pd/Al metallization

AU - Ping, A. T.

AU - Khan, M. Asif

AU - Adesida, I.

PY - 1996/5

Y1 - 1996/5

N2 - Ohmic contacts to n-type GaN grown by metalorganic chemical vapor deposition were formed using a Pd/Al-based metallization. Ohmic contact resistances and specific contact resistances were investigated as a function of rapid thermal annealing temperature, Pd interlayer thickness, and annealing time. As-deposited Pd/Al was found to produce rectifying contacts while the metallization exhibited ohmic characteristics after annealing at temperatures as low as 400°C. A minimum contact resistance of 0.9 ohm-mm (specific contact resistance = 1.2 × 10-5 ohm-cm2) was obtained upon annealing at 650°C for 30 s. For comparison, Al and Ti/Al contacts were also investigated. Auger electron spectroscopy, secondary ion mass spectrometry, and x-ray diffraction were used to investigate metallurgical reactions.

AB - Ohmic contacts to n-type GaN grown by metalorganic chemical vapor deposition were formed using a Pd/Al-based metallization. Ohmic contact resistances and specific contact resistances were investigated as a function of rapid thermal annealing temperature, Pd interlayer thickness, and annealing time. As-deposited Pd/Al was found to produce rectifying contacts while the metallization exhibited ohmic characteristics after annealing at temperatures as low as 400°C. A minimum contact resistance of 0.9 ohm-mm (specific contact resistance = 1.2 × 10-5 ohm-cm2) was obtained upon annealing at 650°C for 30 s. For comparison, Al and Ti/Al contacts were also investigated. Auger electron spectroscopy, secondary ion mass spectrometry, and x-ray diffraction were used to investigate metallurgical reactions.

KW - Gallium nitride (GaN)

KW - Ohmic contacts

UR - http://www.scopus.com/inward/record.url?scp=0000356689&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000356689&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0000356689

VL - 25

SP - 819

EP - 824

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

SN - 0361-5235

IS - 5

ER -