OMVPE-Grown InAIAs/InGaAs /InP MODFET’s with Performance Comparable to those Grown by MBE

Minh Tong; Kari Nummila; Andrew Ketterson; Ilesanmi Adesida

doi:10.1109/16.158817

OMVPE-Grown InAIAs/InGaAs /InP MODFET’s with Performance Comparable to those Grown by MBE

Minh Tong, Kari Nummila, Andrew Ketterson, Ilesanmi Adesida

Nazarbayev University

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

The performance comparison of current-gain cutoff frequency f_Tbetween InAIAs/InGaAs/InP MODFET’s on OMVPE-grown heterostructures and MBE-grown heterostructures is presented. InAlAs/InGaAs/InP MODFET’s on OMVPE-grown heterostructures have been fabricated with different Gate lengths from 2.5 to 0.27 pm. An effective electron saturation velocity of 2.0 x 10⁷cm /s is deduced from an f_T• L_gproduct of 32 GHz • pm. An extrinsic dc transconductance g_mas high as 1020 mS/mm, and an f_Tof over 114 GHz at room temperature have been achieved for 0.27-pm gate-length MOD-FET’s. It is shown that these values, and indeed, the device characteristics obtained at all gate lengths compare favorably with the best results reported in the literature for MODFET’s on heterostructures grown by MBE.

Original language	English
Pages (from-to)	2411-2413
Number of pages	3
Journal	IEEE Transactions on Electron Devices
Volume	39
Issue number	10
DOIs	https://doi.org/10.1109/16.158817
Publication status	Published - Oct 1992

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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title = "OMVPE-Grown InAIAs/InGaAs /InP MODFET{\textquoteright}s with Performance Comparable to those Grown by MBE",

abstract = "The performance comparison of current-gain cutoff frequency fTbetween InAIAs/InGaAs/InP MODFET{\textquoteright}s on OMVPE-grown heterostructures and MBE-grown heterostructures is presented. InAlAs/InGaAs/InP MODFET{\textquoteright}s on OMVPE-grown heterostructures have been fabricated with different Gate lengths from 2.5 to 0.27 pm. An effective electron saturation velocity of 2.0 x 107cm /s is deduced from an fT• Lgproduct of 32 GHz • pm. An extrinsic dc transconductance gmas high as 1020 mS/mm, and an fTof over 114 GHz at room temperature have been achieved for 0.27-pm gate-length MOD-FET{\textquoteright}s. It is shown that these values, and indeed, the device characteristics obtained at all gate lengths compare favorably with the best results reported in the literature for MODFET{\textquoteright}s on heterostructures grown by MBE.",

author = "Minh Tong and Kari Nummila and Andrew Ketterson and Ilesanmi Adesida",

year = "1992",

month = oct,

doi = "10.1109/16.158817",

language = "English",

volume = "39",

pages = "2411--2413",

journal = "IEEE Transactions on Electron Devices",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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}

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T1 - OMVPE-Grown InAIAs/InGaAs /InP MODFET’s with Performance Comparable to those Grown by MBE

AU - Tong, Minh

AU - Nummila, Kari

AU - Ketterson, Andrew

AU - Adesida, Ilesanmi

PY - 1992/10

Y1 - 1992/10

N2 - The performance comparison of current-gain cutoff frequency fTbetween InAIAs/InGaAs/InP MODFET’s on OMVPE-grown heterostructures and MBE-grown heterostructures is presented. InAlAs/InGaAs/InP MODFET’s on OMVPE-grown heterostructures have been fabricated with different Gate lengths from 2.5 to 0.27 pm. An effective electron saturation velocity of 2.0 x 107cm /s is deduced from an fT• Lgproduct of 32 GHz • pm. An extrinsic dc transconductance gmas high as 1020 mS/mm, and an fTof over 114 GHz at room temperature have been achieved for 0.27-pm gate-length MOD-FET’s. It is shown that these values, and indeed, the device characteristics obtained at all gate lengths compare favorably with the best results reported in the literature for MODFET’s on heterostructures grown by MBE.

AB - The performance comparison of current-gain cutoff frequency fTbetween InAIAs/InGaAs/InP MODFET’s on OMVPE-grown heterostructures and MBE-grown heterostructures is presented. InAlAs/InGaAs/InP MODFET’s on OMVPE-grown heterostructures have been fabricated with different Gate lengths from 2.5 to 0.27 pm. An effective electron saturation velocity of 2.0 x 107cm /s is deduced from an fT• Lgproduct of 32 GHz • pm. An extrinsic dc transconductance gmas high as 1020 mS/mm, and an fTof over 114 GHz at room temperature have been achieved for 0.27-pm gate-length MOD-FET’s. It is shown that these values, and indeed, the device characteristics obtained at all gate lengths compare favorably with the best results reported in the literature for MODFET’s on heterostructures grown by MBE.

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