Abstract
A quantitative analysis of the impedance of nonideal heterojunctions was carried out taking into consideration the effects of series resistance, shunt resistance, parasitic inductance and electrically active interface traps. A new approach is proposed to determine the energy distribution of surface state density and to calculate the actual value of barrier capacitance of heterojunctions on the basis of the analysis of their complex impedancevoltage characteristics.
Original language | English |
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Article number | 035024 |
Journal | Semiconductor Science and Technology |
Volume | 27 |
Issue number | 3 |
DOIs | |
Publication status | Published - Mar 2012 |
Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry