On the impedance spectroscopy of structures with a potential barrier

V. V. Brus

doi:10.1134/S1063782612080040

On the impedance spectroscopy of structures with a potential barrier

V. V. Brus

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

A detailed analysis of the spectral dependences of the real and imaginary components of the measured impedance of a simulated silicon p-n junction is carried out within the framework of a conventional equivalent circuit (parallel R _dC _b chain and series resistance R _s). A simple technique was proposed for determining the true value of the barrier capacitance of structures with a potential barrier (without surface electrically active states) on the basis of analysis of the spectral dependence for the imaginary part of the measured impedance.

Original language	English
Pages (from-to)	1012-1015
Number of pages	4
Journal	Semiconductors
Volume	46
Issue number	8
DOIs	https://doi.org/10.1134/S1063782612080040
Publication status	Published - Aug 2012
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

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On the impedance spectroscopy of structures with a potential barrier

Abstract

ASJC Scopus subject areas

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