A detailed analysis of the spectral dependences of the real and imaginary components of the measured impedance of a simulated silicon p-n junction is carried out within the framework of a conventional equivalent circuit (parallel R dC b chain and series resistance R s). A simple technique was proposed for determining the true value of the barrier capacitance of structures with a potential barrier (without surface electrically active states) on the basis of analysis of the spectral dependence for the imaginary part of the measured impedance.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics