On the impedance spectroscopy of structures with a potential barrier

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15 Citations (Scopus)

Abstract

A detailed analysis of the spectral dependences of the real and imaginary components of the measured impedance of a simulated silicon p-n junction is carried out within the framework of a conventional equivalent circuit (parallel R dC b chain and series resistance R s). A simple technique was proposed for determining the true value of the barrier capacitance of structures with a potential barrier (without surface electrically active states) on the basis of analysis of the spectral dependence for the imaginary part of the measured impedance.

Original languageEnglish
Pages (from-to)1012-1015
Number of pages4
JournalSemiconductors
Volume46
Issue number8
DOIs
Publication statusPublished - Aug 2012
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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