Optical characterization of InGaAs/InP quantum wires and dots

S. Q. Gu, E. Reuter, Q. Xu, H. Chang, R. Panepucci, I. Adesida, S. G. Bishop

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

High resolution electron beam lithography and reactive ion etching in methane-hydrogen (CH4/H2) plasmas have been used to fabricate InGaAs/InP open quantum well wires (QWW) with widths ranging from 200 to 40 nm and quantum dots (QD) with diameters ranging from 600 to 100 nm. Low temperature photoluminescence (PL) spectra were investigated in these nanostructures as a function of excitation intensity, wire width, and dot diameter. The peak emission of the dry-etched 40 nm wires is shifted to higher energies by about 2 meV as compared to 100 nm wires. This `open wire' result is consistent with results reported for buried InGaAs/InP wires of the same width. The blue-shift of the PL peak reaches 10 meV in QDs as their diameters decrease to 100 nm. The magnitude of the observed blue shift in the QDs is larger than the blue-shift predicted on the basis of quantum confinement for the same size dots.

Original languageEnglish
Title of host publicationDiagnostic Techniques for Semiconductor Materials Processing
PublisherMaterials Research Society
Pages181-186
Number of pages6
Volume324
ISBN (Print)1558992235
Publication statusPublished - 1994
Externally publishedYes
EventProceedings of the 1993 Fall Meeting of the Materials Research Society - Boston, MA, USA
Duration: Nov 29 1993Dec 2 1993

Other

OtherProceedings of the 1993 Fall Meeting of the Materials Research Society
CityBoston, MA, USA
Period11/29/9312/2/93

Fingerprint

Semiconductor quantum wires
Semiconductor quantum dots
Wire
etching
Photoluminescence
methane
hydrogen
plasma
electron
Quantum confinement
ion
Electron beam lithography
Reactive ion etching
Methane
Semiconductor quantum wells
energy
Hydrogen
Nanostructures
Plasmas

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Engineering(all)
  • Earth and Planetary Sciences(all)
  • Environmental Science(all)

Cite this

Gu, S. Q., Reuter, E., Xu, Q., Chang, H., Panepucci, R., Adesida, I., & Bishop, S. G. (1994). Optical characterization of InGaAs/InP quantum wires and dots. In Diagnostic Techniques for Semiconductor Materials Processing (Vol. 324, pp. 181-186). Materials Research Society.

Optical characterization of InGaAs/InP quantum wires and dots. / Gu, S. Q.; Reuter, E.; Xu, Q.; Chang, H.; Panepucci, R.; Adesida, I.; Bishop, S. G.

Diagnostic Techniques for Semiconductor Materials Processing. Vol. 324 Materials Research Society, 1994. p. 181-186.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Gu, SQ, Reuter, E, Xu, Q, Chang, H, Panepucci, R, Adesida, I & Bishop, SG 1994, Optical characterization of InGaAs/InP quantum wires and dots. in Diagnostic Techniques for Semiconductor Materials Processing. vol. 324, Materials Research Society, pp. 181-186, Proceedings of the 1993 Fall Meeting of the Materials Research Society, Boston, MA, USA, 11/29/93.
Gu SQ, Reuter E, Xu Q, Chang H, Panepucci R, Adesida I et al. Optical characterization of InGaAs/InP quantum wires and dots. In Diagnostic Techniques for Semiconductor Materials Processing. Vol. 324. Materials Research Society. 1994. p. 181-186
Gu, S. Q. ; Reuter, E. ; Xu, Q. ; Chang, H. ; Panepucci, R. ; Adesida, I. ; Bishop, S. G. / Optical characterization of InGaAs/InP quantum wires and dots. Diagnostic Techniques for Semiconductor Materials Processing. Vol. 324 Materials Research Society, 1994. pp. 181-186
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