Optical characterization of InGaAs/InP quantum wires and dots

S. Q. Gu, E. Reuter, Q. Xu, H. Chang, R. Panepucci, I. Adesida, S. G. Bishop

Research output: Chapter in Book/Report/Conference proceedingConference contribution


High resolution electron beam lithography and reactive ion etching in methane-hydrogen (CH4/H2) plasmas have been used to fabricate InGaAs/InP open quantum well wires (QWW) with widths ranging from 200 to 40 nm and quantum dots (QD) with diameters ranging from 600 to 100 nm. Low temperature photoluminescence (PL) spectra were investigated in these nanostructures as a function of excitation intensity, wire width, and dot diameter. The peak emission of the dry-etched 40 nm wires is shifted to higher energies by about 2 meV as compared to 100 nm wires. This `open wire' result is consistent with results reported for buried InGaAs/InP wires of the same width. The blue-shift of the PL peak reaches 10 meV in QDs as their diameters decrease to 100 nm. The magnitude of the observed blue shift in the QDs is larger than the blue-shift predicted on the basis of quantum confinement for the same size dots.

Original languageEnglish
Title of host publicationDiagnostic Techniques for Semiconductor Materials Processing
PublisherMaterials Research Society
Number of pages6
ISBN (Print)1558992235
Publication statusPublished - Jan 1 1994
EventProceedings of the 1993 Fall Meeting of the Materials Research Society - Boston, MA, USA
Duration: Nov 29 1993Dec 2 1993

Publication series

NameMaterials Research Society Symposium Proceedings
ISSN (Print)0272-9172


OtherProceedings of the 1993 Fall Meeting of the Materials Research Society
CityBoston, MA, USA

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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