Optical gain of interdiffused GaInNAs/GaAs quantum wells

M. C Y Chan, C. Surya, P. K A Wai

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

A self-consistent model for the band structure and optical gain spectra in interdiffused GaxIn1-xN0.04As0.96/GaAs single quantum wells are studied theoretically using Fick's Law and the Fermi Golden Rule. Due to quantum-well interdiffusion, the peak gain and its peak vary with the annealing time. Our results show that the interdiffusion technique can be used to tune the operation wavelength for multi-wavelength applications without degradation of device performance.

Original languageEnglish
Pages (from-to)573-576
Number of pages4
JournalApplied Physics A: Materials Science and Processing
Volume75
Issue number5
DOIs
Publication statusPublished - Nov 1 2002
Externally publishedYes

Fingerprint

Optical gain
Semiconductor quantum wells
quantum wells
Fick's laws
Wavelength
wavelengths
Band structure
Annealing
degradation
Degradation
annealing
gallium arsenide

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy (miscellaneous)

Cite this

Optical gain of interdiffused GaInNAs/GaAs quantum wells. / Chan, M. C Y; Surya, C.; Wai, P. K A.

In: Applied Physics A: Materials Science and Processing, Vol. 75, No. 5, 01.11.2002, p. 573-576.

Research output: Contribution to journalArticle

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