Optical properties of TiO 2-MnO 2 thin films prepared by electron-beam evaporation

V. V. Brus; Z. D. Kovalyuk; P. D. Maryanchuk

doi:10.1134/S1063784212080063

Optical properties of TiO ₂-MnO ₂ thin films prepared by electron-beam evaporation

V. V. Brus, Z. D. Kovalyuk, P. D. Maryanchuk

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

The optical constants and thickness of TiO ₂-MnO ₂ films (with MnO ₂ concentration of 0, 1, and 5%) prepared by electron-beam evaporation are determined. A considerable dependence of the optical properties of thin TiO ₂ films on the manganese concentration is observed. It is found that thin films are indirect gap semiconductors with gap width E _g = 3. 43 eV (TiO ₂), 2. 89 eV (TiO ₂-MnO ₂ (1%)), and 2. 73 eV (TiO ₂-MnO ₂ (5%)).

Original language	English
Pages (from-to)	1148-1151
Number of pages	4
Journal	Technical Physics
Volume	57
Issue number	8
DOIs	https://doi.org/10.1134/S1063784212080063
Publication status	Published - Aug 2012
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Optical properties of TiO 2-MnO 2 thin films prepared by electron-beam evaporation",

abstract = "The optical constants and thickness of TiO 2-MnO 2 films (with MnO 2 concentration of 0, 1, and 5%) prepared by electron-beam evaporation are determined. A considerable dependence of the optical properties of thin TiO 2 films on the manganese concentration is observed. It is found that thin films are indirect gap semiconductors with gap width E g = 3. 43 eV (TiO 2), 2. 89 eV (TiO 2-MnO 2 (1%)), and 2. 73 eV (TiO 2-MnO 2 (5%)).",

author = "Brus, {V. V.} and Kovalyuk, {Z. D.} and Maryanchuk, {P. D.}",

year = "2012",

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doi = "10.1134/S1063784212080063",

language = "English",

volume = "57",

pages = "1148--1151",

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T1 - Optical properties of TiO 2-MnO 2 thin films prepared by electron-beam evaporation

AU - Brus, V. V.

AU - Kovalyuk, Z. D.

AU - Maryanchuk, P. D.

PY - 2012/8

Y1 - 2012/8

N2 - The optical constants and thickness of TiO 2-MnO 2 films (with MnO 2 concentration of 0, 1, and 5%) prepared by electron-beam evaporation are determined. A considerable dependence of the optical properties of thin TiO 2 films on the manganese concentration is observed. It is found that thin films are indirect gap semiconductors with gap width E g = 3. 43 eV (TiO 2), 2. 89 eV (TiO 2-MnO 2 (1%)), and 2. 73 eV (TiO 2-MnO 2 (5%)).

AB - The optical constants and thickness of TiO 2-MnO 2 films (with MnO 2 concentration of 0, 1, and 5%) prepared by electron-beam evaporation are determined. A considerable dependence of the optical properties of thin TiO 2 films on the manganese concentration is observed. It is found that thin films are indirect gap semiconductors with gap width E g = 3. 43 eV (TiO 2), 2. 89 eV (TiO 2-MnO 2 (1%)), and 2. 73 eV (TiO 2-MnO 2 (5%)).

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