TY - JOUR
T1 - Optical transceiver with in-chip temperature compensation module design and fabrication
AU - Sangirov, Jamshid
AU - Uddin, Mohammad Rakib
AU - Sangirov, Gulomjon
AU - Ukaegbu, Ikechi Augustine
AU - Lee, Tae-Woo
AU - Park, Hyo-Hoon
PY - 2016/9/6
Y1 - 2016/9/6
N2 - An optical transceiver module with in-chip temperature compensation has been implemented using a 0.13 µm complementary metal oxide semiconductor technology to demonstrate stable light emission with temperature variations. The TRx module works up to 6.125 Gbps data rate and achieves a BER of <10−12 with received power of −11 dBm and input power of −8.2 dBm for Tx and Rx, respectively, at room temperature (25 °C). A measured 3-dB bandwidth of 4.05 and 4.75 GHz are obtained for the transmitter and receiver, respectively. For a temperature increase of 25–100 °C, the temperature compensation effectively works for the Tx module with an increased power of 1.2 dB, whereas temperature uncompensated Rx module input power increases to 3.5 dB at 6.125 Gbps and BER of <10−12.
AB - An optical transceiver module with in-chip temperature compensation has been implemented using a 0.13 µm complementary metal oxide semiconductor technology to demonstrate stable light emission with temperature variations. The TRx module works up to 6.125 Gbps data rate and achieves a BER of <10−12 with received power of −11 dBm and input power of −8.2 dBm for Tx and Rx, respectively, at room temperature (25 °C). A measured 3-dB bandwidth of 4.05 and 4.75 GHz are obtained for the transmitter and receiver, respectively. For a temperature increase of 25–100 °C, the temperature compensation effectively works for the Tx module with an increased power of 1.2 dB, whereas temperature uncompensated Rx module input power increases to 3.5 dB at 6.125 Gbps and BER of <10−12.
M3 - Article
VL - 48
SP - 450
JO - Optical and Quantum Electronics
JF - Optical and Quantum Electronics
SN - 0306-8919
IS - 10
ER -