Abstract
The reactive ion etching characteristics of (100) GaAs in SiCl4 have been investigated. It was found that pronounced orientation dependent etching could be obtained under plasma conditions of low power density and moderate pressures (around 20 m Torr). At very low pressures, structures with vertical sidewalls were obtained. The structures obtained in the orientation dependent etching mode are similar to those obtained by wet etching and those observed in bromine plasma etching. Etch profiles were different along the [011] and [01̄1] orientations and the relation of etch rates in the different planes follows the relation R〈100〉>R 〈111〉>R〈100〉.
| Original language | English |
|---|---|
| Pages (from-to) | 897-899 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 45 |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - 1984 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Orientation dependent reactive ion etching of GaAs in SiCl4 . / Li, J. Z.; Adesida, I.; Wolf, E. D.
In: Applied Physics Letters, Vol. 45, No. 8, 1984, p. 897-899.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Orientation dependent reactive ion etching of GaAs in SiCl4
AU - Li, J. Z.
AU - Adesida, I.
AU - Wolf, E. D.
PY - 1984
Y1 - 1984
N2 - The reactive ion etching characteristics of (100) GaAs in SiCl4 have been investigated. It was found that pronounced orientation dependent etching could be obtained under plasma conditions of low power density and moderate pressures (around 20 m Torr). At very low pressures, structures with vertical sidewalls were obtained. The structures obtained in the orientation dependent etching mode are similar to those obtained by wet etching and those observed in bromine plasma etching. Etch profiles were different along the [011] and [01̄1] orientations and the relation of etch rates in the different planes follows the relation R〈100〉>R 〈111〉>R〈100〉.
AB - The reactive ion etching characteristics of (100) GaAs in SiCl4 have been investigated. It was found that pronounced orientation dependent etching could be obtained under plasma conditions of low power density and moderate pressures (around 20 m Torr). At very low pressures, structures with vertical sidewalls were obtained. The structures obtained in the orientation dependent etching mode are similar to those obtained by wet etching and those observed in bromine plasma etching. Etch profiles were different along the [011] and [01̄1] orientations and the relation of etch rates in the different planes follows the relation R〈100〉>R 〈111〉>R〈100〉.
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U2 - 10.1063/1.95406
DO - 10.1063/1.95406
M3 - Article
VL - 45
SP - 897
EP - 899
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 8
ER -