Abstract
It is found that in electron resonant tunneling via localised states, the current exhibits a very strong temperature dependence and power nonconservation. This subtle behaviour is due to the impurity states induced tunneling which is subsequently renormalised by an overlap integral of many-electron states in the emitter. By using a temperature-dependent dynamical approach, an analysis of this interesting tunneling process is performed. It is found that the temperature dependence of the current has a very different origin from the thermal activation. It is also found that plasmon excitation in the emitter further renormalises the tunneling current by a factor of two to three orders of magnitude.
| Original language | English |
|---|---|
| Pages (from-to) | 231-234 |
| Number of pages | 4 |
| Journal | Surface Science |
| Volume | 361-362 |
| DOIs | |
| Publication status | Published - Jul 20 1996 |
| Externally published | Yes |
Keywords
- Gallium arsenide
- Many-body and quasi-particle theories
- Tunneling
ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Materials Chemistry
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Cite this
Zhang, C., Fisher, D. J., & Stewart, S. M. (1996). Origin of current broadening in resonant tunneling via localised states. Surface Science, 361-362, 231-234. https://doi.org/10.1016/0039-6028(96)00391-3