Origin of current broadening in resonant tunneling via localised states

C. Zhang, D. J. Fisher, S. M. Stewart

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

It is found that in electron resonant tunneling via localised states, the current exhibits a very strong temperature dependence and power nonconservation. This subtle behaviour is due to the impurity states induced tunneling which is subsequently renormalised by an overlap integral of many-electron states in the emitter. By using a temperature-dependent dynamical approach, an analysis of this interesting tunneling process is performed. It is found that the temperature dependence of the current has a very different origin from the thermal activation. It is also found that plasmon excitation in the emitter further renormalises the tunneling current by a factor of two to three orders of magnitude.

Original languageEnglish
Pages (from-to)231-234
Number of pages4
JournalSurface Science
Volume361-362
DOIs
Publication statusPublished - Jul 20 1996
Externally publishedYes

Fingerprint

Resonant tunneling
resonant tunneling
emitters
temperature dependence
electron states
Temperature
Electron energy levels
Chemical activation
activation
Impurities
impurities
Electrons
excitation
electrons
temperature

Keywords

  • Gallium arsenide
  • Many-body and quasi-particle theories
  • Tunneling

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Origin of current broadening in resonant tunneling via localised states. / Zhang, C.; Fisher, D. J.; Stewart, S. M.

In: Surface Science, Vol. 361-362, 20.07.1996, p. 231-234.

Research output: Contribution to journalArticle

Zhang, C. ; Fisher, D. J. ; Stewart, S. M. / Origin of current broadening in resonant tunneling via localised states. In: Surface Science. 1996 ; Vol. 361-362. pp. 231-234.
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