Abstract
It is found that in electron resonant tunneling via localised states, the current exhibits a very strong temperature dependence and power nonconservation. This subtle behaviour is due to the impurity states induced tunneling which is subsequently renormalised by an overlap integral of many-electron states in the emitter. By using a temperature-dependent dynamical approach, an analysis of this interesting tunneling process is performed. It is found that the temperature dependence of the current has a very different origin from the thermal activation. It is also found that plasmon excitation in the emitter further renormalises the tunneling current by a factor of two to three orders of magnitude.
Original language | English |
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Pages (from-to) | 231-234 |
Number of pages | 4 |
Journal | Surface Science |
Volume | 361-362 |
DOIs | |
Publication status | Published - Jul 20 1996 |
Externally published | Yes |
Keywords
- Gallium arsenide
- Many-body and quasi-particle theories
- Tunneling
ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Materials Chemistry