Abstract
It is found that in electron resonant tunneling via localised states, the current exhibits a very strong temperature dependence and power nonconservation. This subtle behaviour is due to the impurity states induced tunneling which is subsequently renormalised by an overlap integral of many-electron states in the emitter. By using a temperature-dependent dynamical approach, an analysis of this interesting tunneling process is performed. It is found that the temperature dependence of the current has a very different origin from the thermal activation. It is also found that plasmon excitation in the emitter further renormalises the tunneling current by a factor of two to three orders of magnitude.
| Original language | English |
|---|---|
| Pages (from-to) | 231-234 |
| Number of pages | 4 |
| Journal | Surface Science |
| Volume | 361-362 |
| DOIs | |
| Publication status | Published - Jul 20 1996 |
| Externally published | Yes |
Fingerprint
Keywords
- Gallium arsenide
- Many-body and quasi-particle theories
- Tunneling
ASJC Scopus subject areas
- Physical and Theoretical Chemistry
- Condensed Matter Physics
- Surfaces and Interfaces
Cite this
Origin of current broadening in resonant tunneling via localised states. / Zhang, C.; Fisher, D. J.; Stewart, S. M.
In: Surface Science, Vol. 361-362, 20.07.1996, p. 231-234.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Origin of current broadening in resonant tunneling via localised states
AU - Zhang, C.
AU - Fisher, D. J.
AU - Stewart, S. M.
PY - 1996/7/20
Y1 - 1996/7/20
N2 - It is found that in electron resonant tunneling via localised states, the current exhibits a very strong temperature dependence and power nonconservation. This subtle behaviour is due to the impurity states induced tunneling which is subsequently renormalised by an overlap integral of many-electron states in the emitter. By using a temperature-dependent dynamical approach, an analysis of this interesting tunneling process is performed. It is found that the temperature dependence of the current has a very different origin from the thermal activation. It is also found that plasmon excitation in the emitter further renormalises the tunneling current by a factor of two to three orders of magnitude.
AB - It is found that in electron resonant tunneling via localised states, the current exhibits a very strong temperature dependence and power nonconservation. This subtle behaviour is due to the impurity states induced tunneling which is subsequently renormalised by an overlap integral of many-electron states in the emitter. By using a temperature-dependent dynamical approach, an analysis of this interesting tunneling process is performed. It is found that the temperature dependence of the current has a very different origin from the thermal activation. It is also found that plasmon excitation in the emitter further renormalises the tunneling current by a factor of two to three orders of magnitude.
KW - Gallium arsenide
KW - Many-body and quasi-particle theories
KW - Tunneling
UR - http://www.scopus.com/inward/record.url?scp=0030189506&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0030189506&partnerID=8YFLogxK
U2 - 10.1016/0039-6028(96)00391-3
DO - 10.1016/0039-6028(96)00391-3
M3 - Article
AN - SCOPUS:0030189506
VL - 361-362
SP - 231
EP - 234
JO - Surface Science
JF - Surface Science
SN - 0039-6028
ER -