Oscillatory conductance in a double-bend quantum dot device

H. Chang, R. Grundbacher, T. Kawanura, J. -P.leburton, I. Adesida

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

We have successfully observed negative differential conductance in an electrostatically confined double-bend quantum dot device at low temperatures under different source-drain bias conditions. The structure fabricated on a modulation-doped GaAs/AlGaAs layer consists of a zero-dimensional (0D) submicrometre dot that is connected to wide source and drain regions via one-dimensional (1D) leads. By changing the external gate voltage, the size of the dot and 1D leads can be altered. Conductance oscillations have been observed for temperatures as high as 7 K. To our knowledge such oscillations have not previously been reported in similar laterally confined quantum dot devices at such high temperatures.

Original languageEnglish
Article number014
Pages (from-to)210-212
Number of pages3
JournalSemiconductor Science and Technology
Volume9
Issue number2
DOIs
Publication statusPublished - 1994

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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