Abstract
We have successfully observed negative differential conductance in an electrostatically confined double-bend quantum dot device at low temperatures under different source-drain bias conditions. The structure fabricated on a modulation-doped GaAs/AlGaAs layer consists of a zero-dimensional (0D) submicrometre dot that is connected to wide source and drain regions via one-dimensional (1D) leads. By changing the external gate voltage, the size of the dot and 1D leads can be altered. Conductance oscillations have been observed for temperatures as high as 7 K. To our knowledge such oscillations have not previously been reported in similar laterally confined quantum dot devices at such high temperatures.
Original language | English |
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Article number | 014 |
Pages (from-to) | 210-212 |
Number of pages | 3 |
Journal | Semiconductor Science and Technology |
Volume | 9 |
Issue number | 2 |
DOIs | |
Publication status | Published - 1994 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry