p-Type SiGe transistors with low gate leakage using SiN gate dielectric

W. Lu, X. W. Wang, R. Hammond, A. Kuliev, S. Koester, J. O. Chu, K. Ismail, T. P. Ma, I. Adesida

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Using high-quality jet-vapor-deposited (JVD) SiN as gate dielectric, p-type SiGe transistors are fabricated on SiGe heterostructures grown by ultra-high-vacuum chemical vapor deposition (UHVCVD). For an 0.25-μm gate-length device, the gate leakage current is as small as 2.4 nA/mm at Vds = -1.0 V and Vgs = 0.4 V. A maximum extrinsic transconductance of 167 mS/mm is measured. A unity current gain cutoff frequency of 27 GHz and a maximum oscillation frequency of 45 GHz are obtained.

Original languageEnglish
Pages (from-to)514-516
Number of pages3
JournalIEEE Electron Device Letters
Volume20
Issue number10
DOIs
Publication statusPublished - Oct 1 1999

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Lu, W., Wang, X. W., Hammond, R., Kuliev, A., Koester, S., Chu, J. O., Ismail, K., Ma, T. P., & Adesida, I. (1999). p-Type SiGe transistors with low gate leakage using SiN gate dielectric. IEEE Electron Device Letters, 20(10), 514-516. https://doi.org/10.1109/55.791927