Performance Comparison of X-and γ-Ray CdTe Detectors with MoOx, TiOx, and TiN Schottky Contacts

O. Maslyanchuk; M. Solovan; V. Brus; P. Maryanchuk; E. Maistruk; I. Fodchuk; V. Gnatyuk; T. Aoki; C. Lambropoulos; C. Potiriadis

doi:10.1109/TNS.2018.2838766

Performance Comparison of X-and γ-Ray CdTe Detectors with MoO_x, TiO_x, and TiN Schottky Contacts

O. Maslyanchuk, M. Solovan, V. Brus, P. Maryanchuk, E. Maistruk, I. Fodchuk, V. Gnatyuk, T. Aoki, C. Lambropoulos, C. Potiriadis

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Electrical characteristics of Mo-MoO_x/p-CdTe/MoO_x-Mo, Ti-TiO_x/p-CdTe/MoO_x-Mo, and Ti-TiN/p-CdTe/MoO_x-Mo structures, manufactured by magnetron sputtering of the thin films on CdTe semi-insulating crystals, produced by Acrorad Co. Ltd. were studied. The optimization of conditions of the substrate pretreatment and the contacts deposition allowed to reduce the dark current of the Mo-MoO_x/p-CdTe/MoO_x-Mo detectors compared to earlier analogs and, consequently, to improve its spectrometric characteristics. Charge transport mechanisms in the structures under investigation were determined: the generation-recombination within the space-charge region at relatively low voltages and space charge limited currents at high voltages. There was shown that the structures Mo-MoO_x/p-CdTe/MoO_x-Mo, Ti-TiO_x/p-CdTe/MoO_x-Mo, and Ti-TiN/p-CdTe/MoO_x-Mo can be used for practical applications in the X-and γ-ray detectors.

Original language	English
Pages (from-to)	1365-1370
Number of pages	6
Journal	IEEE Transactions on Nuclear Science
Volume	65
Issue number	7
DOIs	https://doi.org/10.1109/TNS.2018.2838766
Publication status	Published - Jul 2018
Externally published	Yes

Keywords

Charge carrier processes
energy resolution
leakage currents
Schottky diodes
X-ray detectors
X-ray diffraction

ASJC Scopus subject areas

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

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Performance Comparison of X-and γ-Ray CdTe Detectors with MoO_x, TiO_x, and TiN Schottky Contacts. / Maslyanchuk, O.; Solovan, M.; Brus, V.; Maryanchuk, P.; Maistruk, E.; Fodchuk, I.; Gnatyuk, V.; Aoki, T.; Lambropoulos, C.; Potiriadis, C.

In: IEEE Transactions on Nuclear Science, Vol. 65, No. 7, 07.2018, p. 1365-1370.

Research output: Contribution to journal › Article › peer-review

@article{5f57ba2c35a4465cbc4a1bd472a76b3f,

title = "Performance Comparison of X-and γ-Ray CdTe Detectors with MoOx, TiOx, and TiN Schottky Contacts",

abstract = "Electrical characteristics of Mo-MoOx/p-CdTe/MoOx-Mo, Ti-TiOx/p-CdTe/MoOx-Mo, and Ti-TiN/p-CdTe/MoOx-Mo structures, manufactured by magnetron sputtering of the thin films on CdTe semi-insulating crystals, produced by Acrorad Co. Ltd. were studied. The optimization of conditions of the substrate pretreatment and the contacts deposition allowed to reduce the dark current of the Mo-MoOx/p-CdTe/MoOx-Mo detectors compared to earlier analogs and, consequently, to improve its spectrometric characteristics. Charge transport mechanisms in the structures under investigation were determined: the generation-recombination within the space-charge region at relatively low voltages and space charge limited currents at high voltages. There was shown that the structures Mo-MoOx/p-CdTe/MoOx-Mo, Ti-TiOx/p-CdTe/MoOx-Mo, and Ti-TiN/p-CdTe/MoOx-Mo can be used for practical applications in the X-and γ-ray detectors.",

keywords = "Charge carrier processes, energy resolution, leakage currents, Schottky diodes, X-ray detectors, X-ray diffraction",

author = "O. Maslyanchuk and M. Solovan and V. Brus and P. Maryanchuk and E. Maistruk and I. Fodchuk and V. Gnatyuk and T. Aoki and C. Lambropoulos and C. Potiriadis",

note = "Funding Information: Manuscript received April 20, 2018; revised May 9, 2018; accepted May 16, 2018. Date of publication May 21, 2018; date of current version July 16, 2018. This work was supported by the NATO Science for Peace and Security Programme under Project SENERA SfP-984705. The work of V. Brus was supported by the Alexander-von-Humboldt Foundation.",

year = "2018",

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doi = "10.1109/TNS.2018.2838766",

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T1 - Performance Comparison of X-and γ-Ray CdTe Detectors with MoOx, TiOx, and TiN Schottky Contacts

AU - Maslyanchuk, O.

AU - Solovan, M.

AU - Brus, V.

AU - Maryanchuk, P.

AU - Maistruk, E.

AU - Fodchuk, I.

AU - Gnatyuk, V.

AU - Aoki, T.

AU - Lambropoulos, C.

AU - Potiriadis, C.

N1 - Funding Information: Manuscript received April 20, 2018; revised May 9, 2018; accepted May 16, 2018. Date of publication May 21, 2018; date of current version July 16, 2018. This work was supported by the NATO Science for Peace and Security Programme under Project SENERA SfP-984705. The work of V. Brus was supported by the Alexander-von-Humboldt Foundation.

PY - 2018/7

Y1 - 2018/7

N2 - Electrical characteristics of Mo-MoOx/p-CdTe/MoOx-Mo, Ti-TiOx/p-CdTe/MoOx-Mo, and Ti-TiN/p-CdTe/MoOx-Mo structures, manufactured by magnetron sputtering of the thin films on CdTe semi-insulating crystals, produced by Acrorad Co. Ltd. were studied. The optimization of conditions of the substrate pretreatment and the contacts deposition allowed to reduce the dark current of the Mo-MoOx/p-CdTe/MoOx-Mo detectors compared to earlier analogs and, consequently, to improve its spectrometric characteristics. Charge transport mechanisms in the structures under investigation were determined: the generation-recombination within the space-charge region at relatively low voltages and space charge limited currents at high voltages. There was shown that the structures Mo-MoOx/p-CdTe/MoOx-Mo, Ti-TiOx/p-CdTe/MoOx-Mo, and Ti-TiN/p-CdTe/MoOx-Mo can be used for practical applications in the X-and γ-ray detectors.

AB - Electrical characteristics of Mo-MoOx/p-CdTe/MoOx-Mo, Ti-TiOx/p-CdTe/MoOx-Mo, and Ti-TiN/p-CdTe/MoOx-Mo structures, manufactured by magnetron sputtering of the thin films on CdTe semi-insulating crystals, produced by Acrorad Co. Ltd. were studied. The optimization of conditions of the substrate pretreatment and the contacts deposition allowed to reduce the dark current of the Mo-MoOx/p-CdTe/MoOx-Mo detectors compared to earlier analogs and, consequently, to improve its spectrometric characteristics. Charge transport mechanisms in the structures under investigation were determined: the generation-recombination within the space-charge region at relatively low voltages and space charge limited currents at high voltages. There was shown that the structures Mo-MoOx/p-CdTe/MoOx-Mo, Ti-TiOx/p-CdTe/MoOx-Mo, and Ti-TiN/p-CdTe/MoOx-Mo can be used for practical applications in the X-and γ-ray detectors.

KW - Charge carrier processes

KW - energy resolution

KW - leakage currents

KW - Schottky diodes

KW - X-ray detectors

KW - X-ray diffraction

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