Performance Comparison of X-and γ-Ray CdTe Detectors with MoOx, TiOx, and TiN Schottky Contacts

O. Maslyanchuk, M. Solovan, V. Brus, P. Maryanchuk, E. Maistruk, I. Fodchuk, V. Gnatyuk, T. Aoki, C. Lambropoulos, C. Potiriadis

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


Electrical characteristics of Mo-MoOx/p-CdTe/MoOx-Mo, Ti-TiOx/p-CdTe/MoOx-Mo, and Ti-TiN/p-CdTe/MoOx-Mo structures, manufactured by magnetron sputtering of the thin films on CdTe semi-insulating crystals, produced by Acrorad Co. Ltd. were studied. The optimization of conditions of the substrate pretreatment and the contacts deposition allowed to reduce the dark current of the Mo-MoOx/p-CdTe/MoOx-Mo detectors compared to earlier analogs and, consequently, to improve its spectrometric characteristics. Charge transport mechanisms in the structures under investigation were determined: the generation-recombination within the space-charge region at relatively low voltages and space charge limited currents at high voltages. There was shown that the structures Mo-MoOx/p-CdTe/MoOx-Mo, Ti-TiOx/p-CdTe/MoOx-Mo, and Ti-TiN/p-CdTe/MoOx-Mo can be used for practical applications in the X-and γ-ray detectors.

Original languageEnglish
Pages (from-to)1365-1370
Number of pages6
JournalIEEE Transactions on Nuclear Science
Issue number7
Publication statusPublished - Jul 2018
Externally publishedYes


  • Charge carrier processes
  • energy resolution
  • leakage currents
  • Schottky diodes
  • X-ray detectors
  • X-ray diffraction

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

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