Performance study of InGaAs/InAlAs/Inp MODFETs on heterostructures grown by OMVPE and MBE

I. Adesida, M. Tong, K. Nummila, A. A. Ketterson, L. Aina, M. Mattingly

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Devices fabricated in InAlAs/InGaAs/InP heterostructures have demonstrated superior performance in comparison with GaAs-based heterostructures (1). In particular, InAlAs/InGaAs/InP modulation-doped field effect transistors (MODFETs) with submicron gates have demonstrated higher current drive, higher gain, and better frquency response than their corresponding GaAs-based MODFETs. This advantage is attributed to superior material properties in the form of larger conduction band discontinuity, higher room temperature electron mobility, and higher effective electron velocity. To date, the materials used for realizing these high performance submicron MODFETs have been grown largely by molecular beam epitaxy (MBE). It has recently been shown that excellent InAlAsAnGaAs/InP materials can also be grown using organometallic vapor phase epitaxy (OMVPE) (2). This has led to recent reports of OMVPE-grown InGaAs-channel and InP-channel MODFETs with performances similar to those grown using MBE (3, 4). The flexibility of OMVPE in growing both InP and InGaAs in contrast with conventional MBE makes it more versatile for the realization of materials for optoelectronic integrated circuits (OEICs). In this paper, we present our results on the DC and RF characteristics of OMVPE-grown InAlAs/InGaAs/InP MODFETs (OMVPE MODFETs) as a function of gatelength. These results are compared with results reported in literature for MBE-grown InAlAs/InGaAs/InP MODFETs (MBE MODFETs).

Original languageEnglish
Title of host publicationLEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages357-359
Number of pages3
ISBN (Electronic)0780305221, 9780780305229
DOIs
Publication statusPublished - Jan 1 1992
Externally publishedYes
EventLEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992 - Newport, United States
Duration: Apr 21 1992Apr 24 1992

Publication series

NameLEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992

Conference

ConferenceLEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels - 4th International Conference on Indium Phosphide and Related Materials, IPRM 1992
CountryUnited States
CityNewport
Period4/21/924/24/92

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electronic, Optical and Magnetic Materials
  • Computer Networks and Communications
  • Atomic and Molecular Physics, and Optics

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