Persistent silylium ions stabilized by polyagostic Si-H⋯Si interactions

Andrey Y. Khalimon, Hua Lin Zi, R. Simionescu, Sergei F. Vyboishchikov, Georgii I. Nikonov

Research output: Contribution to journalArticle

35 Citations (Scopus)

Abstract

Diagnostics for diagostics: The silylium ion 1 (see picture; C orange, Si red, H gray) is highly fluxional at room temperature but at -80°C exhibits a symmetric structure with a three-center two-electron Si-H-Si bond supported by two additional Si←H-Si agostic interactions. In the related cation 2, two Si-H bonds coordinate equivalently to the cationic silicon center to afford a symmetrical pentacoordinate silylium ion.

Original languageEnglish
Pages (from-to)4530-4533
Number of pages4
JournalAngewandte Chemie - International Edition
Volume46
Issue number24
DOIs
Publication statusPublished - 2007
Externally publishedYes

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Ions
Silicon
Cations
Positive ions
Electrons
Temperature

Keywords

  • Agostic interactions
  • Density functional calculations
  • Silicon
  • Silylium ions

ASJC Scopus subject areas

  • Chemistry(all)

Cite this

Persistent silylium ions stabilized by polyagostic Si-H⋯Si interactions. / Khalimon, Andrey Y.; Zi, Hua Lin; Simionescu, R.; Vyboishchikov, Sergei F.; Nikonov, Georgii I.

In: Angewandte Chemie - International Edition, Vol. 46, No. 24, 2007, p. 4530-4533.

Research output: Contribution to journalArticle

Khalimon, Andrey Y. ; Zi, Hua Lin ; Simionescu, R. ; Vyboishchikov, Sergei F. ; Nikonov, Georgii I. / Persistent silylium ions stabilized by polyagostic Si-H⋯Si interactions. In: Angewandte Chemie - International Edition. 2007 ; Vol. 46, No. 24. pp. 4530-4533.
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