Abstract
Thin SnO x films have been synthesized with the method of pulsed laser deposition and their microstructure examined using X-ray diffraction (XRD). The films were amorphous as grown and subjected to postdeposition annealing in air to various temperatures. The litharge phase of SnO (α-SnO) was found only in films grown at laser fluences greater than ∼1.9 x 10 8 W cm -2 and was stable in the temperature range of ∼300-500 °C. Formation of the orthorhombic SnO 2 phase (o-SnO 2) was correlated with film thickness, being found in thicker films (basically, >500 nm) at ∼500 °C, and was stable up to ∼900 °C. These observations are examined in light of results from time-of-flight mass spectrometric analysis of the ablated plume. The average grain size of these films, as determined from the XRD peak widths, was found to increase with increasing laser fluence and film thickness.
| Original language | English |
|---|---|
| Pages (from-to) | 564-567 |
| Number of pages | 4 |
| Journal | Chemistry of Materials |
| Volume | 15 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - Jan 2003 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Materials Chemistry
- Materials Science(all)
Cite this
Phase transformations in pulsed laser deposited nanocrystalline tin oxide thin films. / Fan, Haiyan; Reid, Scott A.
In: Chemistry of Materials, Vol. 15, No. 2, 01.2003, p. 564-567.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Phase transformations in pulsed laser deposited nanocrystalline tin oxide thin films
AU - Fan, Haiyan
AU - Reid, Scott A.
PY - 2003/1
Y1 - 2003/1
N2 - Thin SnO x films have been synthesized with the method of pulsed laser deposition and their microstructure examined using X-ray diffraction (XRD). The films were amorphous as grown and subjected to postdeposition annealing in air to various temperatures. The litharge phase of SnO (α-SnO) was found only in films grown at laser fluences greater than ∼1.9 x 10 8 W cm -2 and was stable in the temperature range of ∼300-500 °C. Formation of the orthorhombic SnO 2 phase (o-SnO 2) was correlated with film thickness, being found in thicker films (basically, >500 nm) at ∼500 °C, and was stable up to ∼900 °C. These observations are examined in light of results from time-of-flight mass spectrometric analysis of the ablated plume. The average grain size of these films, as determined from the XRD peak widths, was found to increase with increasing laser fluence and film thickness.
AB - Thin SnO x films have been synthesized with the method of pulsed laser deposition and their microstructure examined using X-ray diffraction (XRD). The films were amorphous as grown and subjected to postdeposition annealing in air to various temperatures. The litharge phase of SnO (α-SnO) was found only in films grown at laser fluences greater than ∼1.9 x 10 8 W cm -2 and was stable in the temperature range of ∼300-500 °C. Formation of the orthorhombic SnO 2 phase (o-SnO 2) was correlated with film thickness, being found in thicker films (basically, >500 nm) at ∼500 °C, and was stable up to ∼900 °C. These observations are examined in light of results from time-of-flight mass spectrometric analysis of the ablated plume. The average grain size of these films, as determined from the XRD peak widths, was found to increase with increasing laser fluence and film thickness.
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U2 - 10.1021/cm0208509
DO - 10.1021/cm0208509
M3 - Article
VL - 15
SP - 564
EP - 567
JO - Chemistry of Materials
JF - Chemistry of Materials
SN - 0897-4756
IS - 2
ER -