Phonon-electron interactions in the two-dimensional electron gas in InGaAs-InAlAs modulation-doped field-effect transistor structures studied by Raman scattering

J. E. Maslar; J. F. Dorsten; P. W. Bohn; S. Agarwala; I. Adesida; C. Caneau; R. Bhat

doi:10.1063/1.110645

Phonon-electron interactions in the two-dimensional electron gas in InGaAs-InAlAs modulation-doped field-effect transistor structures studied by Raman scattering

J. E. Maslar, J. F. Dorsten, P. W. Bohn, S. Agarwala, I. Adesida, C. Caneau, R. Bhat

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

Raman scattering by coupled longitudinal optic phonons and two-dimensional electron gas electrons in In_0.53Ga_0.47As-In _0.52Al_0.48As δ-doped heterostructures provides a powerful probe of electronic properties in these In-based structures. The two highest frequency modes, of the three coupled electron-phonon modes expected in this system, were observed, with the highest frequency mode being identified in InGaAs-based systems. The large dispersion of this mode makes it a particularly sensitive probe for changes in such properties as carrier concentration and subband energy. For structures with higher carrier concentrations coupling of the longitudinal optic phonon to multiple electron intersubband transitions is resolved. These measurements are particularly useful for heavily doped structures for which room-temperature Hall measurements cannot distinguish channel electrons from those in parallel conduction paths.

Original language	English
Pages (from-to)	1909-1911
Number of pages	3
Journal	Applied Physics Letters
Volume	63
Issue number	14
DOIs	https://doi.org/10.1063/1.110645
Publication status	Published - 1993
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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Phonon-electron interactions in the two-dimensional electron gas in InGaAs-InAlAs modulation-doped field-effect transistor structures studied by Raman scattering. / Maslar, J. E.; Dorsten, J. F.; Bohn, P. W.; Agarwala, S.; Adesida, I.; Caneau, C.; Bhat, R.

In: Applied Physics Letters, Vol. 63, No. 14, 1993, p. 1909-1911.

Research output: Contribution to journal › Article › peer-review

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abstract = "Raman scattering by coupled longitudinal optic phonons and two-dimensional electron gas electrons in In0.53Ga0.47As-In 0.52Al0.48As δ-doped heterostructures provides a powerful probe of electronic properties in these In-based structures. The two highest frequency modes, of the three coupled electron-phonon modes expected in this system, were observed, with the highest frequency mode being identified in InGaAs-based systems. The large dispersion of this mode makes it a particularly sensitive probe for changes in such properties as carrier concentration and subband energy. For structures with higher carrier concentrations coupling of the longitudinal optic phonon to multiple electron intersubband transitions is resolved. These measurements are particularly useful for heavily doped structures for which room-temperature Hall measurements cannot distinguish channel electrons from those in parallel conduction paths.",

author = "Maslar, {J. E.} and Dorsten, {J. F.} and Bohn, {P. W.} and S. Agarwala and I. Adesida and C. Caneau and R. Bhat",

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AU - Maslar, J. E.

AU - Dorsten, J. F.

AU - Bohn, P. W.

AU - Agarwala, S.

AU - Adesida, I.

AU - Caneau, C.

AU - Bhat, R.

PY - 1993

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N2 - Raman scattering by coupled longitudinal optic phonons and two-dimensional electron gas electrons in In0.53Ga0.47As-In 0.52Al0.48As δ-doped heterostructures provides a powerful probe of electronic properties in these In-based structures. The two highest frequency modes, of the three coupled electron-phonon modes expected in this system, were observed, with the highest frequency mode being identified in InGaAs-based systems. The large dispersion of this mode makes it a particularly sensitive probe for changes in such properties as carrier concentration and subband energy. For structures with higher carrier concentrations coupling of the longitudinal optic phonon to multiple electron intersubband transitions is resolved. These measurements are particularly useful for heavily doped structures for which room-temperature Hall measurements cannot distinguish channel electrons from those in parallel conduction paths.

AB - Raman scattering by coupled longitudinal optic phonons and two-dimensional electron gas electrons in In0.53Ga0.47As-In 0.52Al0.48As δ-doped heterostructures provides a powerful probe of electronic properties in these In-based structures. The two highest frequency modes, of the three coupled electron-phonon modes expected in this system, were observed, with the highest frequency mode being identified in InGaAs-based systems. The large dispersion of this mode makes it a particularly sensitive probe for changes in such properties as carrier concentration and subband energy. For structures with higher carrier concentrations coupling of the longitudinal optic phonon to multiple electron intersubband transitions is resolved. These measurements are particularly useful for heavily doped structures for which room-temperature Hall measurements cannot distinguish channel electrons from those in parallel conduction paths.

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Phonon-electron interactions in the two-dimensional electron gas in InGaAs-InAlAs modulation-doped field-effect transistor structures studied by Raman scattering

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