Abstract
Raman scattering by coupled longitudinal optic phonons and two-dimensional electron gas electrons in In0.53Ga0.47As-In 0.52Al0.48As δ-doped heterostructures provides a powerful probe of electronic properties in these In-based structures. The two highest frequency modes, of the three coupled electron-phonon modes expected in this system, were observed, with the highest frequency mode being identified in InGaAs-based systems. The large dispersion of this mode makes it a particularly sensitive probe for changes in such properties as carrier concentration and subband energy. For structures with higher carrier concentrations coupling of the longitudinal optic phonon to multiple electron intersubband transitions is resolved. These measurements are particularly useful for heavily doped structures for which room-temperature Hall measurements cannot distinguish channel electrons from those in parallel conduction paths.
| Original language | English |
|---|---|
| Pages (from-to) | 1909-1911 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 63 |
| Issue number | 14 |
| DOIs | |
| Publication status | Published - 1993 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Phonon-electron interactions in the two-dimensional electron gas in InGaAs-InAlAs modulation-doped field-effect transistor structures studied by Raman scattering. / Maslar, J. E.; Dorsten, J. F.; Bohn, P. W.; Agarwala, S.; Adesida, I.; Caneau, C.; Bhat, R.
In: Applied Physics Letters, Vol. 63, No. 14, 1993, p. 1909-1911.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Phonon-electron interactions in the two-dimensional electron gas in InGaAs-InAlAs modulation-doped field-effect transistor structures studied by Raman scattering
AU - Maslar, J. E.
AU - Dorsten, J. F.
AU - Bohn, P. W.
AU - Agarwala, S.
AU - Adesida, I.
AU - Caneau, C.
AU - Bhat, R.
PY - 1993
Y1 - 1993
N2 - Raman scattering by coupled longitudinal optic phonons and two-dimensional electron gas electrons in In0.53Ga0.47As-In 0.52Al0.48As δ-doped heterostructures provides a powerful probe of electronic properties in these In-based structures. The two highest frequency modes, of the three coupled electron-phonon modes expected in this system, were observed, with the highest frequency mode being identified in InGaAs-based systems. The large dispersion of this mode makes it a particularly sensitive probe for changes in such properties as carrier concentration and subband energy. For structures with higher carrier concentrations coupling of the longitudinal optic phonon to multiple electron intersubband transitions is resolved. These measurements are particularly useful for heavily doped structures for which room-temperature Hall measurements cannot distinguish channel electrons from those in parallel conduction paths.
AB - Raman scattering by coupled longitudinal optic phonons and two-dimensional electron gas electrons in In0.53Ga0.47As-In 0.52Al0.48As δ-doped heterostructures provides a powerful probe of electronic properties in these In-based structures. The two highest frequency modes, of the three coupled electron-phonon modes expected in this system, were observed, with the highest frequency mode being identified in InGaAs-based systems. The large dispersion of this mode makes it a particularly sensitive probe for changes in such properties as carrier concentration and subband energy. For structures with higher carrier concentrations coupling of the longitudinal optic phonon to multiple electron intersubband transitions is resolved. These measurements are particularly useful for heavily doped structures for which room-temperature Hall measurements cannot distinguish channel electrons from those in parallel conduction paths.
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U2 - 10.1063/1.110645
DO - 10.1063/1.110645
M3 - Article
VL - 63
SP - 1909
EP - 1911
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 14
ER -