Photo-Injected Carrier Distributions in Metal-Semiconductor-Metal Photodetectors Imaged by Photoluminescence Microscopy

E. E. Reuter, S. Q. Gu, Q. Xu, W. Wohlmuth, I. Adesida, S. G. Bishop

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The effects of size and transparency of fingers on the spatial distribution of radiative recombination of photo-injected carriers in metal-semiconductor-metal photodiodes have been investigated using photoluminescence microscopy. Investigations of detectors having fingers and spaces of 20 μm showed a depletion region width which varies with bias voltage in a quasi-one-dimensional Schottky diode functional form. Regions of non-uniform electric field were observed in the corners of titanium-gold electrode devices and underneath indium-tin-oxide electrodes. Photodiodes with 3 μm wide fingers were found to have a depletion region which did not behave in a quasi-one-dimensional manner.

Original languageEnglish
Pages (from-to)966-970
Number of pages5
JournalIEEE Photonics Technology Letters
Volume6
Issue number8
DOIs
Publication statusPublished - 1994
Externally publishedYes

Fingerprint

Photodetectors
Photodiodes
photometers
Photoluminescence
Microscopic examination
Metals
Semiconductor materials
microscopy
photoluminescence
Electrodes
photodiodes
depletion
Bias voltage
Titanium
Tin oxides
Gold
metals
Transparency
Indium
Spatial distribution

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Physics and Astronomy (miscellaneous)

Cite this

Photo-Injected Carrier Distributions in Metal-Semiconductor-Metal Photodetectors Imaged by Photoluminescence Microscopy. / Reuter, E. E.; Gu, S. Q.; Xu, Q.; Wohlmuth, W.; Adesida, I.; Bishop, S. G.

In: IEEE Photonics Technology Letters, Vol. 6, No. 8, 1994, p. 966-970.

Research output: Contribution to journalArticle

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