Photo-Injected Carrier Distributions in Metal-Semiconductor-Metal Photodetectors Imaged by Photoluminescence Microscopy

E. E. Reuter, S. Q. Gu, Q. Xu, W. Wohlmuth, I. Adesida, S. G. Bishop

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

The effects of size and transparency of fingers on the spatial distribution of radiative recombination of photo-injected carriers in metal-semiconductor-metal photodiodes have been investigated using photoluminescence microscopy. Investigations of detectors having fingers and spaces of 20 μm showed a depletion region width which varies with bias voltage in a quasi-one-dimensional Schottky diode functional form. Regions of non-uniform electric field were observed in the corners of titanium-gold electrode devices and underneath indium-tin-oxide electrodes. Photodiodes with 3 μm wide fingers were found to have a depletion region which did not behave in a quasi-one-dimensional manner.

Original languageEnglish
Pages (from-to)966-970
Number of pages5
JournalIEEE Photonics Technology Letters
Volume6
Issue number8
DOIs
Publication statusPublished - Aug 1994

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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