Photoelectrochemical etching of GaN

C. Youtsey, G. Bulman, I. Adesida

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

A photoelectrochemical etching process for n-type GaN using KOH solution and broad-area Hg arc lamp illumination is described. Etch rates as high as 320 nm/min are obtained. The etch rate is investigated as a function of light intensity for stirred and unstirred solutions. Preliminary results on etching of Al0.1Ga0.9N layers are reported.

Original languageEnglish
Pages (from-to)349-354
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume468
Publication statusPublished - 1997
Externally publishedYes

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Etching
etching
Arc lamps
arc lamps
luminous intensity
Lighting
illumination

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Photoelectrochemical etching of GaN. / Youtsey, C.; Bulman, G.; Adesida, I.

In: Materials Research Society Symposium - Proceedings, Vol. 468, 1997, p. 349-354.

Research output: Contribution to journalArticle

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