Photoelectrochemical etching of GaN

C. Youtsey, G. Bulman, I. Adesida

Research output: Contribution to journalConference articlepeer-review

11 Citations (Scopus)

Abstract

A photoelectrochemical etching process for n-type GaN using KOH solution and broad-area Hg arc lamp illumination is described. Etch rates as high as 320 nm/min are obtained. The etch rate is investigated as a function of light intensity for stirred and unstirred solutions. Preliminary results on etching of Al0.1Ga0.9N layers are reported.

Original languageEnglish
Pages (from-to)349-354
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume468
DOIs
Publication statusPublished - 1997
EventProceedings of the 1997 MRS Spring Symposium - San Francisco, CA, USA
Duration: Apr 1 1997Apr 4 1997

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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