Photoelectrochemical etching of GaN

C. Youtsey; G. Bulman; I. Adesida

doi:10.1557/proc-468-349

Photoelectrochemical etching of GaN

C. Youtsey, G. Bulman, I. Adesida

Research output: Contribution to journal › Conference article › peer-review

11 Citations (Scopus)

Abstract

A photoelectrochemical etching process for n-type GaN using KOH solution and broad-area Hg arc lamp illumination is described. Etch rates as high as 320 nm/min are obtained. The etch rate is investigated as a function of light intensity for stirred and unstirred solutions. Preliminary results on etching of Al_0.1Ga_0.9N layers are reported.

Original language	English
Pages (from-to)	349-354
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	468
DOIs	https://doi.org/10.1557/proc-468-349
Publication status	Published - 1997
Externally published	Yes
Event	Proceedings of the 1997 MRS Spring Symposium - San Francisco, CA, USA Duration: Apr 1 1997 → Apr 4 1997

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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title = "Photoelectrochemical etching of GaN",

abstract = "A photoelectrochemical etching process for n-type GaN using KOH solution and broad-area Hg arc lamp illumination is described. Etch rates as high as 320 nm/min are obtained. The etch rate is investigated as a function of light intensity for stirred and unstirred solutions. Preliminary results on etching of Al0.1Ga0.9N layers are reported.",

author = "C. Youtsey and G. Bulman and I. Adesida",

year = "1997",

doi = "10.1557/proc-468-349",

language = "English",

volume = "468",

pages = "349--354",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1997 MRS Spring Symposium ; Conference date: 01-04-1997 Through 04-04-1997",

}

TY - JOUR

T1 - Photoelectrochemical etching of GaN

AU - Youtsey, C.

AU - Bulman, G.

AU - Adesida, I.

PY - 1997

Y1 - 1997

N2 - A photoelectrochemical etching process for n-type GaN using KOH solution and broad-area Hg arc lamp illumination is described. Etch rates as high as 320 nm/min are obtained. The etch rate is investigated as a function of light intensity for stirred and unstirred solutions. Preliminary results on etching of Al0.1Ga0.9N layers are reported.

AB - A photoelectrochemical etching process for n-type GaN using KOH solution and broad-area Hg arc lamp illumination is described. Etch rates as high as 320 nm/min are obtained. The etch rate is investigated as a function of light intensity for stirred and unstirred solutions. Preliminary results on etching of Al0.1Ga0.9N layers are reported.

UR - http://www.scopus.com/inward/record.url?scp=0030718415&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030718415&partnerID=8YFLogxK

U2 - 10.1557/proc-468-349

DO - 10.1557/proc-468-349

M3 - Conference article

AN - SCOPUS:0030718415

SN - 0272-9172

VL - 468

SP - 349

EP - 354

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1997 MRS Spring Symposium

Y2 - 1 April 1997 through 4 April 1997

ER -

Photoelectrochemical etching of GaN

Abstract

ASJC Scopus subject areas

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