Photoluminescence characterization of InGaAs/InP quantum dots

S. Q. Gu, E. Reuter, Q. Xu, R. Panepucci, A. C. Chen, H. Chang, Ilesanmi Adesida, K. Y. Cheng, Stephen G. Bishop, C. Caneau, R. Bhat

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The photo-excited carrier distribution and radiative recombination efficiency in dryetched quantum well dots (QWDs) with diameters down to 80 nm have been investigated by photoluminescence (PL) spectroscopy and cathodoluminescence (CL) imaging. The quantum well dots were fabricated from lattice-matched single or multiple quantum well heterostructures with InGaAs well thicknesses ranging from 2 to 15 nm. Low temperature CL imaging indicated dot-to-dot variation of emission intensity. The PL efficiency exhibits no significant reduction for dot sizes larger than 170 nm. But for dot diameters smaller than ≈100 nm, the PL intensity is not detectable. Such diminution of PL intensity is attributed to side wall damage due to reactive ion etching. For dot diameters smaller than 300 nm, PL peak energies shift to higher values, reaching a blue shift of ≈3 meV for 128 nm diameter GSMBE grown dots and ≈10 meV for 130 nm diameter MOCVD grown dots.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
PublisherSociety of Photo-Optical Instrumentation Engineers
Pages406-411
Number of pages6
Volume2364
ISBN (Print)0819417084
Publication statusPublished - 1994
Externally publishedYes
EventSecond Int. Conference on Thin Film Physics and Applications - Shanghai, China
Duration: Apr 15 1994Apr 15 1994

Other

OtherSecond Int. Conference on Thin Film Physics and Applications
CityShanghai, China
Period4/15/944/15/94

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

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