Photoluminescence of InGaAs/InP quantum dots

S. Q. Gu, E. Reuter, Q. Xu, R. Panepucci, H. Chang, A. C. Chen, I. Adesida, K. Y. Cheng, S. G. Bishop

Research output: Contribution to journalArticle

Abstract

The spatial distribution of photo-excited carriers in dry etched InGaAs/InP quantum-well-dots (QWDs) has been investigated by photoluminescence (PL) spectroscopy and cathodoluminescence (CL) imaging. High resolution e-beam lithography and CH4/H2 reactive ion etching were used to fabricate QWDs from multiple quantum well (MQW) heterostructures with InGaAs well thicknesses ranging from 1 to 15 nm. Low temperature CL spectra from a single QWD stack provided a measure of the layer-to-layer variation in intensity in such MQW dots. Lateral distributions of emission intensity in single quantum dots and dot-to-dot variations in emission intensity have been obtained from CL line scans. The QWD PL intensity from the thicker, bottom QWDs in a stack is found to increase relative to the PL from the thinner, top QWDs with increasing excitation intensity and increasing temperature. This observation is attributed to the diffusion of carriers generated in the InP substrate into the bottom quantum wells. The PL spectra of all five 128 nm diameter QWDs in the MQW stacks exhibit a blueshift of about 3 meV at the lowest excitation intensity.

Original languageEnglish
Pages (from-to)455-458
Number of pages4
JournalConference Proceedings - International Conference on Indium Phosphide and Related Materials
Publication statusPublished - 1994
Externally publishedYes

Fingerprint

Semiconductor quantum wells
Semiconductor quantum dots
Photoluminescence
quantum dots
quantum wells
photoluminescence
Cathodoluminescence
cathodoluminescence
Photoluminescence spectroscopy
Reactive ion etching
Lithography
Spatial distribution
excitation
Heterojunctions
spatial distribution
lithography
etching
Imaging techniques
Temperature
high resolution

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

Gu, S. Q., Reuter, E., Xu, Q., Panepucci, R., Chang, H., Chen, A. C., ... Bishop, S. G. (1994). Photoluminescence of InGaAs/InP quantum dots. Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 455-458.

Photoluminescence of InGaAs/InP quantum dots. / Gu, S. Q.; Reuter, E.; Xu, Q.; Panepucci, R.; Chang, H.; Chen, A. C.; Adesida, I.; Cheng, K. Y.; Bishop, S. G.

In: Conference Proceedings - International Conference on Indium Phosphide and Related Materials, 1994, p. 455-458.

Research output: Contribution to journalArticle

Gu, SQ, Reuter, E, Xu, Q, Panepucci, R, Chang, H, Chen, AC, Adesida, I, Cheng, KY & Bishop, SG 1994, 'Photoluminescence of InGaAs/InP quantum dots', Conference Proceedings - International Conference on Indium Phosphide and Related Materials, pp. 455-458.
Gu, S. Q. ; Reuter, E. ; Xu, Q. ; Panepucci, R. ; Chang, H. ; Chen, A. C. ; Adesida, I. ; Cheng, K. Y. ; Bishop, S. G. / Photoluminescence of InGaAs/InP quantum dots. In: Conference Proceedings - International Conference on Indium Phosphide and Related Materials. 1994 ; pp. 455-458.
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