Photoluminescence of rapid-thermal annealed Mg-doped GaN films

L. S. Wang, W. K. Fong, C. Surya, K. W. Cheah, W. H. Zheng, Z. G. Wang

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Abstract

We report the investigation of temperature and excitation power dependence in photoluminescence spectroscopy measured in Mg-doped GaN epitaxial layers grown on sapphire by metalorganic chemical vapor deposition. The objective is to examine the effects of rapid-thermal annealing on Mg-related emissions. It is observed that the peak position of the 2.7-2.8 eV emission line is a function of the device temperature and annealing conditions. The phenomenon is attributed to Coulomb-potential fluctuations in the conduction and valence band edge and impurity levels due to the Mg-related complex dissociation. The blue shift of the 2.7-2.8 eV emission line with increasing excitation power provides clear evidence that a donor-acceptor recombination process underlies the observed emission spectrum. In addition, quenching of minor peaks at 3.2 and 3.3 eV are observed and their possible origin is discussed.

Original languageEnglish
Pages (from-to)1153-1157
Number of pages5
JournalSolid-State Electronics
Volume45
Issue number7
DOIs
Publication statusPublished - Jul 1 2001
Externally publishedYes

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Keywords

  • Metalorganic chemical vapor deposition
  • p-Type GaN
  • Photoluminescence
  • Rapid-thermal annealing
  • X-ray diffraction

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Wang, L. S., Fong, W. K., Surya, C., Cheah, K. W., Zheng, W. H., & Wang, Z. G. (2001). Photoluminescence of rapid-thermal annealed Mg-doped GaN films. Solid-State Electronics, 45(7), 1153-1157. https://doi.org/10.1016/S0038-1101(01)00043-0