Photoluminescence of rapid-thermal annealed Mg-doped GaN films

L. S. Wang, W. K. Fong, C. Surya, K. W. Cheah, W. H. Zheng, Z. G. Wang

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

We report the investigation of temperature and excitation power dependence in photoluminescence spectroscopy measured in Mg-doped GaN epitaxial layers grown on sapphire by metalorganic chemical vapor deposition. The objective is to examine the effects of rapid-thermal annealing on Mg-related emissions. It is observed that the peak position of the 2.7-2.8 eV emission line is a function of the device temperature and annealing conditions. The phenomenon is attributed to Coulomb-potential fluctuations in the conduction and valence band edge and impurity levels due to the Mg-related complex dissociation. The blue shift of the 2.7-2.8 eV emission line with increasing excitation power provides clear evidence that a donor-acceptor recombination process underlies the observed emission spectrum. In addition, quenching of minor peaks at 3.2 and 3.3 eV are observed and their possible origin is discussed.

Original languageEnglish
Pages (from-to)1153-1157
Number of pages5
JournalSolid-State Electronics
Volume45
Issue number7
DOIs
Publication statusPublished - Jul 1 2001
Externally publishedYes

Fingerprint

Photoluminescence
photoluminescence
Photoluminescence spectroscopy
Aluminum Oxide
Rapid thermal annealing
Epitaxial layers
Metallorganic chemical vapor deposition
Valence bands
Conduction bands
Sapphire
Quenching
annealing
Coulomb potential
Annealing
Impurities
blue shift
Temperature
excitation
metalorganic chemical vapor deposition
conduction bands

Keywords

  • Metalorganic chemical vapor deposition
  • p-Type GaN
  • Photoluminescence
  • Rapid-thermal annealing
  • X-ray diffraction

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Wang, L. S., Fong, W. K., Surya, C., Cheah, K. W., Zheng, W. H., & Wang, Z. G. (2001). Photoluminescence of rapid-thermal annealed Mg-doped GaN films. Solid-State Electronics, 45(7), 1153-1157. https://doi.org/10.1016/S0038-1101(01)00043-0

Photoluminescence of rapid-thermal annealed Mg-doped GaN films. / Wang, L. S.; Fong, W. K.; Surya, C.; Cheah, K. W.; Zheng, W. H.; Wang, Z. G.

In: Solid-State Electronics, Vol. 45, No. 7, 01.07.2001, p. 1153-1157.

Research output: Contribution to journalArticle

Wang, LS, Fong, WK, Surya, C, Cheah, KW, Zheng, WH & Wang, ZG 2001, 'Photoluminescence of rapid-thermal annealed Mg-doped GaN films', Solid-State Electronics, vol. 45, no. 7, pp. 1153-1157. https://doi.org/10.1016/S0038-1101(01)00043-0
Wang, L. S. ; Fong, W. K. ; Surya, C. ; Cheah, K. W. ; Zheng, W. H. ; Wang, Z. G. / Photoluminescence of rapid-thermal annealed Mg-doped GaN films. In: Solid-State Electronics. 2001 ; Vol. 45, No. 7. pp. 1153-1157.
@article{1ad0c8ce2a5b4cc2b5ed814dbc93b1fc,
title = "Photoluminescence of rapid-thermal annealed Mg-doped GaN films",
abstract = "We report the investigation of temperature and excitation power dependence in photoluminescence spectroscopy measured in Mg-doped GaN epitaxial layers grown on sapphire by metalorganic chemical vapor deposition. The objective is to examine the effects of rapid-thermal annealing on Mg-related emissions. It is observed that the peak position of the 2.7-2.8 eV emission line is a function of the device temperature and annealing conditions. The phenomenon is attributed to Coulomb-potential fluctuations in the conduction and valence band edge and impurity levels due to the Mg-related complex dissociation. The blue shift of the 2.7-2.8 eV emission line with increasing excitation power provides clear evidence that a donor-acceptor recombination process underlies the observed emission spectrum. In addition, quenching of minor peaks at 3.2 and 3.3 eV are observed and their possible origin is discussed.",
keywords = "Metalorganic chemical vapor deposition, p-Type GaN, Photoluminescence, Rapid-thermal annealing, X-ray diffraction",
author = "Wang, {L. S.} and Fong, {W. K.} and C. Surya and Cheah, {K. W.} and Zheng, {W. H.} and Wang, {Z. G.}",
year = "2001",
month = "7",
day = "1",
doi = "10.1016/S0038-1101(01)00043-0",
language = "English",
volume = "45",
pages = "1153--1157",
journal = "Solid-State Electronics",
issn = "0038-1101",
publisher = "Elsevier",
number = "7",

}

TY - JOUR

T1 - Photoluminescence of rapid-thermal annealed Mg-doped GaN films

AU - Wang, L. S.

AU - Fong, W. K.

AU - Surya, C.

AU - Cheah, K. W.

AU - Zheng, W. H.

AU - Wang, Z. G.

PY - 2001/7/1

Y1 - 2001/7/1

N2 - We report the investigation of temperature and excitation power dependence in photoluminescence spectroscopy measured in Mg-doped GaN epitaxial layers grown on sapphire by metalorganic chemical vapor deposition. The objective is to examine the effects of rapid-thermal annealing on Mg-related emissions. It is observed that the peak position of the 2.7-2.8 eV emission line is a function of the device temperature and annealing conditions. The phenomenon is attributed to Coulomb-potential fluctuations in the conduction and valence band edge and impurity levels due to the Mg-related complex dissociation. The blue shift of the 2.7-2.8 eV emission line with increasing excitation power provides clear evidence that a donor-acceptor recombination process underlies the observed emission spectrum. In addition, quenching of minor peaks at 3.2 and 3.3 eV are observed and their possible origin is discussed.

AB - We report the investigation of temperature and excitation power dependence in photoluminescence spectroscopy measured in Mg-doped GaN epitaxial layers grown on sapphire by metalorganic chemical vapor deposition. The objective is to examine the effects of rapid-thermal annealing on Mg-related emissions. It is observed that the peak position of the 2.7-2.8 eV emission line is a function of the device temperature and annealing conditions. The phenomenon is attributed to Coulomb-potential fluctuations in the conduction and valence band edge and impurity levels due to the Mg-related complex dissociation. The blue shift of the 2.7-2.8 eV emission line with increasing excitation power provides clear evidence that a donor-acceptor recombination process underlies the observed emission spectrum. In addition, quenching of minor peaks at 3.2 and 3.3 eV are observed and their possible origin is discussed.

KW - Metalorganic chemical vapor deposition

KW - p-Type GaN

KW - Photoluminescence

KW - Rapid-thermal annealing

KW - X-ray diffraction

UR - http://www.scopus.com/inward/record.url?scp=0035390034&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035390034&partnerID=8YFLogxK

U2 - 10.1016/S0038-1101(01)00043-0

DO - 10.1016/S0038-1101(01)00043-0

M3 - Article

VL - 45

SP - 1153

EP - 1157

JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

IS - 7

ER -