Photoluminescence of rapid-thermal annealed Mg-doped GaN films

L. S. Wang, W. K. Fong, C. Surya, K. W. Cheah, W. H. Zheng, Z. Wang

Research output: Contribution to conferencePaper

Abstract

We report investigation of temperature and excitation power dependencies in photoluminescence spectroscopy measured from Mg-doped GaN epitaxial layers grown on sapphire by metalorganic chemical vapor deposition. The objective is to examine the effects of rapid-thermal annealing on Mg related emissions. It is observed that the peak position of the 2.7 approx. 2.8 eV emission line is a function of the device temperature and detailed annealing procedure. The phenomenon is attributed to Coulomb-potential fluctuations in the conduction and valence bandedges and impurity levels due to the Mg-related complex dissociation. The blue shifts of the 2.7 approx. 2.8 eV emission lines with increasing excitation power provides clear evidence that donor-acceptor recombination process underlies the observed emission spectrum.

Original languageEnglish
Pages154-157
Number of pages4
Publication statusPublished - Dec 1 1999
Externally publishedYes
Event1999 IEEE Hong Kong Electron Devices Meeting (HKEDM99) - Shatin, Hong Kong
Duration: Jun 26 1999Jun 26 1999

Conference

Conference1999 IEEE Hong Kong Electron Devices Meeting (HKEDM99)
CityShatin, Hong Kong
Period6/26/996/26/99

Fingerprint

Photoluminescence
Photoluminescence spectroscopy
Rapid thermal annealing
Epitaxial layers
Metallorganic chemical vapor deposition
Sapphire
Annealing
Impurities
Temperature
Hot Temperature

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Wang, L. S., Fong, W. K., Surya, C., Cheah, K. W., Zheng, W. H., & Wang, Z. (1999). Photoluminescence of rapid-thermal annealed Mg-doped GaN films. 154-157. Paper presented at 1999 IEEE Hong Kong Electron Devices Meeting (HKEDM99), Shatin, Hong Kong, .

Photoluminescence of rapid-thermal annealed Mg-doped GaN films. / Wang, L. S.; Fong, W. K.; Surya, C.; Cheah, K. W.; Zheng, W. H.; Wang, Z.

1999. 154-157 Paper presented at 1999 IEEE Hong Kong Electron Devices Meeting (HKEDM99), Shatin, Hong Kong, .

Research output: Contribution to conferencePaper

Wang, LS, Fong, WK, Surya, C, Cheah, KW, Zheng, WH & Wang, Z 1999, 'Photoluminescence of rapid-thermal annealed Mg-doped GaN films' Paper presented at 1999 IEEE Hong Kong Electron Devices Meeting (HKEDM99), Shatin, Hong Kong, 6/26/99 - 6/26/99, pp. 154-157.
Wang LS, Fong WK, Surya C, Cheah KW, Zheng WH, Wang Z. Photoluminescence of rapid-thermal annealed Mg-doped GaN films. 1999. Paper presented at 1999 IEEE Hong Kong Electron Devices Meeting (HKEDM99), Shatin, Hong Kong, .
Wang, L. S. ; Fong, W. K. ; Surya, C. ; Cheah, K. W. ; Zheng, W. H. ; Wang, Z. / Photoluminescence of rapid-thermal annealed Mg-doped GaN films. Paper presented at 1999 IEEE Hong Kong Electron Devices Meeting (HKEDM99), Shatin, Hong Kong, .4 p.
@conference{5499838ee59e4df4a9b04f9fff5791e2,
title = "Photoluminescence of rapid-thermal annealed Mg-doped GaN films",
abstract = "We report investigation of temperature and excitation power dependencies in photoluminescence spectroscopy measured from Mg-doped GaN epitaxial layers grown on sapphire by metalorganic chemical vapor deposition. The objective is to examine the effects of rapid-thermal annealing on Mg related emissions. It is observed that the peak position of the 2.7 approx. 2.8 eV emission line is a function of the device temperature and detailed annealing procedure. The phenomenon is attributed to Coulomb-potential fluctuations in the conduction and valence bandedges and impurity levels due to the Mg-related complex dissociation. The blue shifts of the 2.7 approx. 2.8 eV emission lines with increasing excitation power provides clear evidence that donor-acceptor recombination process underlies the observed emission spectrum.",
author = "Wang, {L. S.} and Fong, {W. K.} and C. Surya and Cheah, {K. W.} and Zheng, {W. H.} and Z. Wang",
year = "1999",
month = "12",
day = "1",
language = "English",
pages = "154--157",
note = "1999 IEEE Hong Kong Electron Devices Meeting (HKEDM99) ; Conference date: 26-06-1999 Through 26-06-1999",

}

TY - CONF

T1 - Photoluminescence of rapid-thermal annealed Mg-doped GaN films

AU - Wang, L. S.

AU - Fong, W. K.

AU - Surya, C.

AU - Cheah, K. W.

AU - Zheng, W. H.

AU - Wang, Z.

PY - 1999/12/1

Y1 - 1999/12/1

N2 - We report investigation of temperature and excitation power dependencies in photoluminescence spectroscopy measured from Mg-doped GaN epitaxial layers grown on sapphire by metalorganic chemical vapor deposition. The objective is to examine the effects of rapid-thermal annealing on Mg related emissions. It is observed that the peak position of the 2.7 approx. 2.8 eV emission line is a function of the device temperature and detailed annealing procedure. The phenomenon is attributed to Coulomb-potential fluctuations in the conduction and valence bandedges and impurity levels due to the Mg-related complex dissociation. The blue shifts of the 2.7 approx. 2.8 eV emission lines with increasing excitation power provides clear evidence that donor-acceptor recombination process underlies the observed emission spectrum.

AB - We report investigation of temperature and excitation power dependencies in photoluminescence spectroscopy measured from Mg-doped GaN epitaxial layers grown on sapphire by metalorganic chemical vapor deposition. The objective is to examine the effects of rapid-thermal annealing on Mg related emissions. It is observed that the peak position of the 2.7 approx. 2.8 eV emission line is a function of the device temperature and detailed annealing procedure. The phenomenon is attributed to Coulomb-potential fluctuations in the conduction and valence bandedges and impurity levels due to the Mg-related complex dissociation. The blue shifts of the 2.7 approx. 2.8 eV emission lines with increasing excitation power provides clear evidence that donor-acceptor recombination process underlies the observed emission spectrum.

UR - http://www.scopus.com/inward/record.url?scp=0033293487&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033293487&partnerID=8YFLogxK

M3 - Paper

SP - 154

EP - 157

ER -