Photoluminescence of rapid-thermal annealed Mg-doped GaN films

L. S. Wang, W. K. Fong, C. Surya, K. W. Cheah, W. H. Zheng, Z. Wang

Research output: Contribution to conferencePaper

Abstract

We report investigation of temperature and excitation power dependencies in photoluminescence spectroscopy measured from Mg-doped GaN epitaxial layers grown on sapphire by metalorganic chemical vapor deposition. The objective is to examine the effects of rapid-thermal annealing on Mg related emissions. It is observed that the peak position of the 2.7 approx. 2.8 eV emission line is a function of the device temperature and detailed annealing procedure. The phenomenon is attributed to Coulomb-potential fluctuations in the conduction and valence bandedges and impurity levels due to the Mg-related complex dissociation. The blue shifts of the 2.7 approx. 2.8 eV emission lines with increasing excitation power provides clear evidence that donor-acceptor recombination process underlies the observed emission spectrum.

Original languageEnglish
Pages154-157
Number of pages4
Publication statusPublished - Dec 1 1999
Externally publishedYes
Event1999 IEEE Hong Kong Electron Devices Meeting (HKEDM99) - Shatin, Hong Kong
Duration: Jun 26 1999Jun 26 1999

Conference

Conference1999 IEEE Hong Kong Electron Devices Meeting (HKEDM99)
CityShatin, Hong Kong
Period6/26/996/26/99

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Wang, L. S., Fong, W. K., Surya, C., Cheah, K. W., Zheng, W. H., & Wang, Z. (1999). Photoluminescence of rapid-thermal annealed Mg-doped GaN films. 154-157. Paper presented at 1999 IEEE Hong Kong Electron Devices Meeting (HKEDM99), Shatin, Hong Kong, .