Photoluminescence of wet- and dry-etched gallium nitride

E. E. Reuter, C. Youtsey, I. Adesida, S. G. Bishop

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The photoluminescence (PL) of GaN grown on SiC is studied as a function of etch depth for two types of etches, photoelectrochemical and chemically assisted ion beam. It is found that as the etch proceeds deeper toward the substrate, the PL exhibits an increasing blue-shift and an increase in emission intensity of the donor acceptor pair band, which indicates increasing biaxial compressive stress and increasing impurity concentration near the substrate. The PL spectra of the dry etched GaN tended to have slightly higher intensities than comparably wet etched GaN.

Original languageEnglish
Pages (from-to)997-1002
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume482
Publication statusPublished - 1997
Externally publishedYes

Fingerprint

Gallium nitride
gallium nitrides
Photoluminescence
photoluminescence
Substrates
Compressive stress
blue shift
Ion beams
ion beams
Impurities
impurities
gallium nitride

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Photoluminescence of wet- and dry-etched gallium nitride. / Reuter, E. E.; Youtsey, C.; Adesida, I.; Bishop, S. G.

In: Materials Research Society Symposium - Proceedings, Vol. 482, 1997, p. 997-1002.

Research output: Contribution to journalArticle

Reuter, E. E. ; Youtsey, C. ; Adesida, I. ; Bishop, S. G. / Photoluminescence of wet- and dry-etched gallium nitride. In: Materials Research Society Symposium - Proceedings. 1997 ; Vol. 482. pp. 997-1002.
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