Photoluminescence quenching of WS2 nanoflakes upon Ga ion irradiation

Farabi Bozheyev; Renata Nemkayeva; Nazim Guseinov; Marat Kaikanov; Alexander Tikhonov

doi:10.1016/j.jlumin.2019.116786

Photoluminescence quenching of WS₂ nanoflakes upon Ga ion irradiation

Farabi Bozheyev, Renata Nemkayeva, Nazim Guseinov, Marat Kaikanov, Alexander Tikhonov

Laboratory of Materials Processing and Applied Physics

Research output: Contribution to journal › Article

1 Citation (Scopus)

Abstract

Modification of the electronic structure by defect engineering is crucial towards controlling the semiconductor band gap. In this report, the WS₂ nanoflakes produced by self-sustaining high temperature synthesis are irradiated by Ga ion beam. Intensities of the Raman phonon modes and the photoluminescence (PL) are decreased upon increasing dose of Ga ion beam irradiation from 2·10¹³ to 10¹⁶ cm⁻². This leads to the defect generation in the nanoflakes and their thinning. The maximum irradiation dose at 10¹⁶ cm⁻² results in the degradation of the WS₂ nanoflakes, thus to total quenching of the PL signals.

Original language	English
Article number	116786
Journal	Journal of Luminescence
Volume	217
DOIs	https://doi.org/10.1016/j.jlumin.2019.116786
Publication status	Published - Jan 2020

ASJC Scopus subject areas

Biophysics
Biochemistry
Chemistry(all)
Atomic and Molecular Physics, and Optics
Condensed Matter Physics

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Bozheyev, F., Nemkayeva, R., Guseinov, N., Kaikanov, M., & Tikhonov, A. (2020). Photoluminescence quenching of WS₂ nanoflakes upon Ga ion irradiation. Journal of Luminescence, 217, [116786]. https://doi.org/10.1016/j.jlumin.2019.116786

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AU - Tikhonov, Alexander

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