Photoluminescence quenching of WS2 nanoflakes upon Ga ion irradiation

Farabi Bozheyev, Renata Nemkayeva, Nazim Guseinov, Marat Kaikanov, Alexander Tikhonov

Research output: Contribution to journalArticle

Abstract

Modification of the electronic structure by defect engineering is crucial towards controlling the semiconductor band gap. In this report, the WS2 nanoflakes produced by self-sustaining high temperature synthesis are irradiated by Ga ion beam. Intensities of the Raman phonon modes and the photoluminescence (PL) are decreased upon increasing dose of Ga ion beam irradiation from 2·1013 to 1016 cm−2. This leads to the defect generation in the nanoflakes and their thinning. The maximum irradiation dose at 1016 cm−2 results in the degradation of the WS2 nanoflakes, thus to total quenching of the PL signals.

Original languageEnglish
Article number116786
JournalJournal of Luminescence
Volume217
DOIs
Publication statusPublished - Jan 2020

Fingerprint

Ion bombardment
ion irradiation
Ion beams
Dosimetry
Quenching
Photoluminescence
Phonons
ion beams
quenching
Irradiation
Ions
photoluminescence
dosage
Defects
Semiconductors
irradiation
sustaining
defects
Electronic structure
Energy gap

ASJC Scopus subject areas

  • Biophysics
  • Biochemistry
  • Chemistry(all)
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

Cite this

Photoluminescence quenching of WS2 nanoflakes upon Ga ion irradiation. / Bozheyev, Farabi; Nemkayeva, Renata; Guseinov, Nazim; Kaikanov, Marat; Tikhonov, Alexander.

In: Journal of Luminescence, Vol. 217, 116786, 01.2020.

Research output: Contribution to journalArticle

Bozheyev, Farabi ; Nemkayeva, Renata ; Guseinov, Nazim ; Kaikanov, Marat ; Tikhonov, Alexander. / Photoluminescence quenching of WS2 nanoflakes upon Ga ion irradiation. In: Journal of Luminescence. 2020 ; Vol. 217.
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