Abstract
Modification of the electronic structure by defect engineering is crucial towards controlling the semiconductor band gap. In this report, the WS2 nanoflakes produced by self-sustaining high temperature synthesis are irradiated by Ga ion beam. Intensities of the Raman phonon modes and the photoluminescence (PL) are decreased upon increasing dose of Ga ion beam irradiation from 2·1013 to 1016 cm−2. This leads to the defect generation in the nanoflakes and their thinning. The maximum irradiation dose at 1016 cm−2 results in the degradation of the WS2 nanoflakes, thus to total quenching of the PL signals.
| Original language | English |
|---|---|
| Article number | 116786 |
| Journal | Journal of Luminescence |
| Volume | 217 |
| DOIs | |
| Publication status | Published - Jan 2020 |
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ASJC Scopus subject areas
- Biophysics
- Biochemistry
- Chemistry(all)
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
Cite this
Photoluminescence quenching of WS2 nanoflakes upon Ga ion irradiation. / Bozheyev, Farabi; Nemkayeva, Renata; Guseinov, Nazim; Kaikanov, Marat; Tikhonov, Alexander.
In: Journal of Luminescence, Vol. 217, 116786, 01.2020.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Photoluminescence quenching of WS2 nanoflakes upon Ga ion irradiation
AU - Bozheyev, Farabi
AU - Nemkayeva, Renata
AU - Guseinov, Nazim
AU - Kaikanov, Marat
AU - Tikhonov, Alexander
PY - 2020/1
Y1 - 2020/1
N2 - Modification of the electronic structure by defect engineering is crucial towards controlling the semiconductor band gap. In this report, the WS2 nanoflakes produced by self-sustaining high temperature synthesis are irradiated by Ga ion beam. Intensities of the Raman phonon modes and the photoluminescence (PL) are decreased upon increasing dose of Ga ion beam irradiation from 2·1013 to 1016 cm−2. This leads to the defect generation in the nanoflakes and their thinning. The maximum irradiation dose at 1016 cm−2 results in the degradation of the WS2 nanoflakes, thus to total quenching of the PL signals.
AB - Modification of the electronic structure by defect engineering is crucial towards controlling the semiconductor band gap. In this report, the WS2 nanoflakes produced by self-sustaining high temperature synthesis are irradiated by Ga ion beam. Intensities of the Raman phonon modes and the photoluminescence (PL) are decreased upon increasing dose of Ga ion beam irradiation from 2·1013 to 1016 cm−2. This leads to the defect generation in the nanoflakes and their thinning. The maximum irradiation dose at 1016 cm−2 results in the degradation of the WS2 nanoflakes, thus to total quenching of the PL signals.
UR - http://www.scopus.com/inward/record.url?scp=85072779725&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85072779725&partnerID=8YFLogxK
U2 - 10.1016/j.jlumin.2019.116786
DO - 10.1016/j.jlumin.2019.116786
M3 - Article
AN - SCOPUS:85072779725
VL - 217
JO - Journal of Luminescence
JF - Journal of Luminescence
SN - 0022-2313
M1 - 116786
ER -