Photoluminescence studies of sidewall properties of dry-etched InGaAs/InP quantum wires

S. Q. Gu, X. Liu, M. Covington, E. Reuter, H. Chang, R. Panepucci, I. Adesida, S. G. Bishop, C. Caneau, R. Bhat

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

InGaAs/InP quantum wires with widths ranging from 200 to 40 nm have been fabricated using high-resolution electron-beam lithography and CH 4/H2 reactive-ion etching. The excitation intensity dependence of the photoluminescence (PL) energies and line shapes for relatively wide wires (∼100 nm) exhibits the effects of band filling in k space and band-gap renormalization due to many-body effects in dense electron-hole plasmas (EHP). In the narrowest wires studied (∼40 nm), the effects of sidewall surface recombination limit the attainable EHP density. In addition, the results show a blue shift of PL energies when wire width decreases below 100 nm.

Original languageEnglish
Pages (from-to)8071-8074
Number of pages4
JournalJournal of Applied Physics
Volume75
Issue number12
DOIs
Publication statusPublished - 1994
Externally publishedYes

Fingerprint

quantum wires
wire
photoluminescence
blue shift
plasma density
line shape
lithography
etching
electron beams
methylidyne
energy
high resolution
excitation
ions

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Gu, S. Q., Liu, X., Covington, M., Reuter, E., Chang, H., Panepucci, R., ... Bhat, R. (1994). Photoluminescence studies of sidewall properties of dry-etched InGaAs/InP quantum wires. Journal of Applied Physics, 75(12), 8071-8074. https://doi.org/10.1063/1.356549

Photoluminescence studies of sidewall properties of dry-etched InGaAs/InP quantum wires. / Gu, S. Q.; Liu, X.; Covington, M.; Reuter, E.; Chang, H.; Panepucci, R.; Adesida, I.; Bishop, S. G.; Caneau, C.; Bhat, R.

In: Journal of Applied Physics, Vol. 75, No. 12, 1994, p. 8071-8074.

Research output: Contribution to journalArticle

Gu, SQ, Liu, X, Covington, M, Reuter, E, Chang, H, Panepucci, R, Adesida, I, Bishop, SG, Caneau, C & Bhat, R 1994, 'Photoluminescence studies of sidewall properties of dry-etched InGaAs/InP quantum wires', Journal of Applied Physics, vol. 75, no. 12, pp. 8071-8074. https://doi.org/10.1063/1.356549
Gu, S. Q. ; Liu, X. ; Covington, M. ; Reuter, E. ; Chang, H. ; Panepucci, R. ; Adesida, I. ; Bishop, S. G. ; Caneau, C. ; Bhat, R. / Photoluminescence studies of sidewall properties of dry-etched InGaAs/InP quantum wires. In: Journal of Applied Physics. 1994 ; Vol. 75, No. 12. pp. 8071-8074.
@article{782576430a7e41fab17520c4c9d97ad9,
title = "Photoluminescence studies of sidewall properties of dry-etched InGaAs/InP quantum wires",
abstract = "InGaAs/InP quantum wires with widths ranging from 200 to 40 nm have been fabricated using high-resolution electron-beam lithography and CH 4/H2 reactive-ion etching. The excitation intensity dependence of the photoluminescence (PL) energies and line shapes for relatively wide wires (∼100 nm) exhibits the effects of band filling in k space and band-gap renormalization due to many-body effects in dense electron-hole plasmas (EHP). In the narrowest wires studied (∼40 nm), the effects of sidewall surface recombination limit the attainable EHP density. In addition, the results show a blue shift of PL energies when wire width decreases below 100 nm.",
author = "Gu, {S. Q.} and X. Liu and M. Covington and E. Reuter and H. Chang and R. Panepucci and I. Adesida and Bishop, {S. G.} and C. Caneau and R. Bhat",
year = "1994",
doi = "10.1063/1.356549",
language = "English",
volume = "75",
pages = "8071--8074",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "12",

}

TY - JOUR

T1 - Photoluminescence studies of sidewall properties of dry-etched InGaAs/InP quantum wires

AU - Gu, S. Q.

AU - Liu, X.

AU - Covington, M.

AU - Reuter, E.

AU - Chang, H.

AU - Panepucci, R.

AU - Adesida, I.

AU - Bishop, S. G.

AU - Caneau, C.

AU - Bhat, R.

PY - 1994

Y1 - 1994

N2 - InGaAs/InP quantum wires with widths ranging from 200 to 40 nm have been fabricated using high-resolution electron-beam lithography and CH 4/H2 reactive-ion etching. The excitation intensity dependence of the photoluminescence (PL) energies and line shapes for relatively wide wires (∼100 nm) exhibits the effects of band filling in k space and band-gap renormalization due to many-body effects in dense electron-hole plasmas (EHP). In the narrowest wires studied (∼40 nm), the effects of sidewall surface recombination limit the attainable EHP density. In addition, the results show a blue shift of PL energies when wire width decreases below 100 nm.

AB - InGaAs/InP quantum wires with widths ranging from 200 to 40 nm have been fabricated using high-resolution electron-beam lithography and CH 4/H2 reactive-ion etching. The excitation intensity dependence of the photoluminescence (PL) energies and line shapes for relatively wide wires (∼100 nm) exhibits the effects of band filling in k space and band-gap renormalization due to many-body effects in dense electron-hole plasmas (EHP). In the narrowest wires studied (∼40 nm), the effects of sidewall surface recombination limit the attainable EHP density. In addition, the results show a blue shift of PL energies when wire width decreases below 100 nm.

UR - http://www.scopus.com/inward/record.url?scp=0028443276&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0028443276&partnerID=8YFLogxK

U2 - 10.1063/1.356549

DO - 10.1063/1.356549

M3 - Article

AN - SCOPUS:0028443276

VL - 75

SP - 8071

EP - 8074

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 12

ER -