Photoluminescence studies of sidewall properties of dry-etched InGaAs/InP quantum wires

S. Q. Gu, X. Liu, M. Covington, E. Reuter, H. Chang, R. Panepucci, I. Adesida, S. G. Bishop, C. Caneau, R. Bhat

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13 Citations (Scopus)

Abstract

InGaAs/InP quantum wires with widths ranging from 200 to 40 nm have been fabricated using high-resolution electron-beam lithography and CH 4/H2 reactive-ion etching. The excitation intensity dependence of the photoluminescence (PL) energies and line shapes for relatively wide wires (∼100 nm) exhibits the effects of band filling in k space and band-gap renormalization due to many-body effects in dense electron-hole plasmas (EHP). In the narrowest wires studied (∼40 nm), the effects of sidewall surface recombination limit the attainable EHP density. In addition, the results show a blue shift of PL energies when wire width decreases below 100 nm.

Original languageEnglish
Pages (from-to)8071-8074
Number of pages4
JournalJournal of Applied Physics
Volume75
Issue number12
DOIs
Publication statusPublished - Dec 1 1994
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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