InGaAs/InP quantum wires with widths ranging from 200 to 40 nm have been fabricated using high-resolution electron-beam lithography and CH 4/H2 reactive-ion etching. The excitation intensity dependence of the photoluminescence (PL) energies and line shapes for relatively wide wires (∼100 nm) exhibits the effects of band filling in k space and band-gap renormalization due to many-body effects in dense electron-hole plasmas (EHP). In the narrowest wires studied (∼40 nm), the effects of sidewall surface recombination limit the attainable EHP density. In addition, the results show a blue shift of PL energies when wire width decreases below 100 nm.
ASJC Scopus subject areas
- Physics and Astronomy(all)