TY - JOUR
T1 - Photonic metasurface made of array of lens-like SiGe Mie resonators formed on (100) Si substrate via dewetting
AU - Poborchii, Vladimir
AU - Shklyaev, Alexander
AU - Bolotov, Leonid
AU - Uchida, Noriyuki
AU - Tada, Tetsuya
AU - Utegulov, Zhandos N.
N1 - Funding Information:
Acknowledgments The authors are grateful to Dr. M. Yurkin for discussions and consultations regarding the ADDA code. This research was partially funded by Nazarbayev University Grant No. SST2015014. The partial financial support by the Russian Science Foundation (Grant 14-22-00143) is gratefully acknowledged.
Publisher Copyright:
© 2017 The Japan Society of Applied Physics.
PY - 2017/12/1
Y1 - 2017/12/1
N2 - Metasurfaces consisting of arrays of high-index Mie resonators concentrating/redirecting light are important for integrated optics, photodetectors, and solar cells. Herein, we report the optical properties of low-Ge-content SiGe lens-like Mie resonator island arrays fabricated via dewetting during Ge deposition on a Si(100) surface at approximately 900 °C. We observe enhancement of the Si interaction with light owing to the efficient island-induced light concentration in the submicron-depth Si layer, which is mediated by both near-field Mie resonance leaking into the substrate and far-field light focusing. Such metasurfaces can improve the Si photodetector and solar-cell performance.
AB - Metasurfaces consisting of arrays of high-index Mie resonators concentrating/redirecting light are important for integrated optics, photodetectors, and solar cells. Herein, we report the optical properties of low-Ge-content SiGe lens-like Mie resonator island arrays fabricated via dewetting during Ge deposition on a Si(100) surface at approximately 900 °C. We observe enhancement of the Si interaction with light owing to the efficient island-induced light concentration in the submicron-depth Si layer, which is mediated by both near-field Mie resonance leaking into the substrate and far-field light focusing. Such metasurfaces can improve the Si photodetector and solar-cell performance.
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U2 - 10.7567/APEX.10.125501
DO - 10.7567/APEX.10.125501
M3 - Article
AN - SCOPUS:85040021043
SN - 1882-0778
VL - 10
JO - Applied Physics Express
JF - Applied Physics Express
IS - 12
M1 - 125501
ER -