Physical properties of the heterojunction MoOx/n-CdTe as a function of the parameters of CdTe crystals

Andrii I. Mostovyi, Mykhailo M. Solovan, Viktor V. Brus, Tõnu Pullerits, Pavlo D. Maryanchuk

Research output: Chapter in Book/Report/Conference proceedingConference contribution


MoOx/n-CdTe photosensitive heterostructures were prepared by the deposition of molybdenum oxide thin films onto three different n-type CdTe substrates (ρ1=0.4 Ωfirst>cm, ρ2=10 Ωfirst>cm, ρ3=40 Ωfirst>cm) by DC reactive magnetron sputtering. The height of the potential barrier and series resistance of the MoOx/CdTe heterojunctions were investigated. The dominating current transport mechanisms through the heterojunctions were determined at forward and reverse biases.

Original languageEnglish
Title of host publicationThirteenth International Conference on Correlation Optics
EditorsOleg V. Angelsky
ISBN (Electronic)9781510617278
Publication statusPublished - 2018
Externally publishedYes
Event13th International Conference on Correlation Optics - Chernivtsi, Ukraine
Duration: Sep 11 2017Sep 15 2017

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X


Conference13th International Conference on Correlation Optics


  • CdTe
  • Current transport mechanisms
  • Heterojunction
  • MoO
  • Ohmic contacts
  • Physical properties

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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