Physical properties of the heterojunction MoOx/n-CdTe as a function of the parameters of CdTe crystals

Andrii I. Mostovyi, Mykhailo M. Solovan, Viktor V. Brus, Tõnu Pullerits, Pavlo D. Maryanchuk

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

MoOx/n-CdTe photosensitive heterostructures were prepared by the deposition of molybdenum oxide thin films onto three different n-type CdTe substrates (ρ1=0.4 Ωfirst>cm, ρ2=10 Ωfirst>cm, ρ3=40 Ωfirst>cm) by DC reactive magnetron sputtering. The height of the potential barrier and series resistance of the MoOx/CdTe heterojunctions were investigated. The dominating current transport mechanisms through the heterojunctions were determined at forward and reverse biases.

Original languageEnglish
Title of host publicationThirteenth International Conference on Correlation Optics
EditorsOleg V. Angelsky
PublisherSPIE
ISBN (Electronic)9781510617278
DOIs
Publication statusPublished - 2018
Externally publishedYes
Event13th International Conference on Correlation Optics - Chernivtsi, Ukraine
Duration: Sep 11 2017Sep 15 2017

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume10612
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

Conference13th International Conference on Correlation Optics
CountryUkraine
CityChernivtsi
Period9/11/179/15/17

Keywords

  • CdTe
  • Current transport mechanisms
  • Heterojunction
  • MoO
  • Ohmic contacts
  • Physical properties

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Physical properties of the heterojunction MoO<sub>x</sub>/n-CdTe as a function of the parameters of CdTe crystals'. Together they form a unique fingerprint.

Cite this